| PART |
Description |
Maker |
| MT6L61AE |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| 3SK135A 3SK135A-T1 3SK135A-KS 3SK135A-T2 |
For UHF TV tuner high frequency amplification
RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
|
NEC
|
| 2SK3475 |
Field Effect Transistor Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications
VHF-and UHF-band Amplifier Applications
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| BAT68-04W BAT68-05W BAT68-06W BAT68W |
Silicon Schottky Diodes (For mixer applications in the VHF/UHF range For high speed switching) SILICON, VHF-UHF BAND, MIXER DIODE
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 3SK300 3SK300ZR-TL-E |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET LEAD FREE, SC-61AA, MPAK-4
Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier
|
Comchip Technology Co., Ltd.
Renesas Electronics Corporation
|
| BAT68-04 BAT68-04W BAT68-06 BAT68-06W BAT68-07W |
SILICON, VHF-UHF BAND, MIXER DIODE
Silicon Schottky Diodes
|
Infineon Technologies AG
|
| 933912210215 |
SILICON, UHF BAND, MIXER DIODE
|
NXP SEMICONDUCTORS
|
| BB515-T |
UHF BAND, 17.75 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
|
NXP SEMICONDUCTORS
|
| MMBD353L |
SILICON, UHF BAND, MIXER DIODE, TO-236AB
|
MOTOROLA INC
|
