| PART |
Description |
Maker |
| FDZ293P06 FDZ293P |
P-Channel 2.5 V Specified PowerTrench? BGA MOSFET
P-Channel 2.5 V Specified PowerTrench㈢ BGA MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| K7P401811M-HC160 K7P403611M-HC200 K7P403611M |
128Kx36 & 256Kx18 Synchronous Pipelined SRAM Data Sheet
128K X 36 STANDARD SRAM, 2.5 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
256K X 18 STANDARD SRAM, 3 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
|
Samsung Electronic
|
| IBM25PPC740L-GB375A2T IBM25PPC740L-GB375A2R IBM25P |
MICROPROCESSOR|32-BIT|CMOS|BGA|360PIN|CERAMIC
MICROPROCESSOR|32-BIT|CMOS|BGA|255PIN|CERAMIC 微处理器| 32位|的CMOS | BGA封装| 255PIN |陶瓷
|
Glenair, Inc.
Vishay Semiconductors
|
| AS7C251MPFD18A-133BC AS7C251MPFD18A-133BCN |
1M X 18 STANDARD SRAM, 3.8 ns, PBGA165 BGA-165
1M X 18 STANDARD SRAM, 3.8 ns, PBGA165 LEAD FREE, BGA-165
|
Alliance Semiconductor, Corp.
|
| US115T US115TE US112 US112T US112E US211 US211E US |
Analog IC
Intel® LXT16726 DeMUX, 132-pin BGA, Tray
Intel® LXT16726 DeMUX, 142-pin BGA, Tray
|
|
| UPD44325084F5-E37-EQ2-A UPD44325084F5-E50-EQ2-A UP |
4M X 8 QDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, LEAD FREE, PLASTIC, BGA-165
4M X 8 QDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, PLASTIC, BGA-165
|
NEC, Corp.
|
| FDZ2553NZ |
Monolithic Common Drainl N-Channel 2.5V Specified PowerTrench BGA MOSFET
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench BGA MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| EPM7512AEBC256-10 EPM7256AEFC100-10 |
COMPLEX-EEPLD,512-CELL,10NS PROP DELAY,BGA,256PIN,PLASTIC
COMPLEX-EEPLD,256-CELL,10NS PROP DELAY,BGA,100PIN,PLASTIC
|
Altera Corp
|
| K7P401822B-HC16 K7P401822B-HC20 K7P401822B-HC25 K7 |
SENSOR DIFF VACUUM GAGE 10 H2O 128K × 36
128Kx36 & 256Kx18 Synchronous Pipelined SRAM 128K × 36
256K X 18 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119
128K X 36 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119
256K X 18 STANDARD SRAM, 3 ns, PBGA119 14 X 22 MM, BGA-119
SENSOR DIFF VACUUM GAGE 1PSI
SENSOR ABSOLUTE 0-15PSIA
128Kx36 & 256Kx18 Synchronous Pipelined SRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| K7P323688M-HC250 K7P323688M-GC250 |
1M X 36 LATE-WRITE SRAM, 2 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
1M X 36 LATE-WRITE SRAM, 2 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANCE, BGA-119
|
TOKO, Inc.
|
| AT49BV160-90CI AT49BV161-70CI AT49BV161-90CI AT49B |
EEPROM|FLASH|1MX16/2MX8|CMOS|BGA|48PIN|PLASTIC
EEPROM|FLASH|1MX16/2MX8|CMOS|BGA|45PIN|PLASTIC 的EEPROM | FLASH动画| 1MX16/2MX8 |的CMOS | BGA封装| 45PIN |塑料
|
ATM Electronic, Corp.
|
|
