| PART |
Description |
Maker |
| IRF6603 |
30V Single N-Channel HEXFET Power MOSFET in a DirectFET package
HEXFETPower MOSFET
|
IRF[International Rectifier]
|
| IRF1010EPBF |
HEXFETPower MOSFET ㈢的HEXFET功率MOSFET
|
International Rectifier, Corp.
|
| IR710PBF INTERNATIONALRECTIFIER-IR710PBF |
HEXFETPower MOSFET ㈢的HEXFET功率MOSFET
|
|
| IRFB4127PBF |
HEXFETPower MOSFET
High Efficiency Synchronous Rectification in SMPS
|
International Rectifier
|
| IRLML2244TRPBF |
HEXFETpower MOSFET RoHS compliant containing no lead, no bromide and no halogen
|
TY Semiconductor Co., Ltd
|
| IRLML0040TRPBF |
HEXFETpower MOSFET Compatible with existing Surface Mount Techniques Lower switching losses
|
TY Semiconductor Co., Ltd
|
| STL20NM20N06 STL20NM20N |
N-CHANNEL 200V - 0.088Ω - 20A PowerFLAT ULTRA LOW GATE CHARGE MDmesh II MOSFET
N-CHANNEL 200V - 0.088ヘ - 20A PowerFLAT⑩ ULTRA LOW GATE CHARGE MDmesh⑩ II MOSFET
|
STMicroelectronics
|
| IRF7750GPBF |
HEXFET庐 Power MOSFET Ultra Low On-Resistance Dual P-Channel MOSFET
|
International Rectifier
|
| AND8139D NL17SV16XV5T2 AND8139 NL17SV00XV5T2 NL17S |
2-Input OR Gate, Ultra-Low Voltage
Non Inverting Buffer, Ultra Low Voltage
Single 2-Input NOR Gate, Ultra-Low Voltage
Single 2-Input NAND Gate, Ultra-Low Voltage
ULTRA-LOW VOLTAGE MINIGATE DEVICES SOLVE 1.2 V INTERFACE PROBLEMS
|
ONSEMI[ON Semiconductor]
|
| STL6NM60N |
N-channel 600 V - 0.85 Ω - 5.75 A - PowerFLAT (5x5) ultra low gate charge MDmesh II Power MOSFET
N-channel 600 V - 0.85 ヘ - 5.75 A - PowerFLAT⑩ (5x5) ultra low gate charge MDmesh⑩ II Power MOSFET
|
STMicroelectronics
|
| STL55NH3LL |
N-channel 30 V, 0.0079 Ω, 15 A, PowerFLAT (6x5) ultra low gate charge STripFET Power MOSFET
N-channel 30 V, 0.0079 ヘ, 15 A, PowerFLAT⑩ (6x5) ultra low gate charge STripFET⑩ Power MOSFET
|
STMicroelectronics
|
| STL75NH3LL |
N-channel 30 V, 0.004 Ω, 20 A, PowerFLAT (6x5) ultra low gate charge STripFET Power MOSFET
N-channel 30 V, 0.004 ヘ, 20 A, PowerFLAT⑩ (6x5) ultra low gate charge STripFET⑩ Power MOSFET
|
STMicroelectronics
|
