PART |
Description |
Maker |
OM9403SD |
25V 8A Single Channel Hi-Rel IGBT Gate Driver in a DP-10A package IGBT GATE DRIVER For Driving IGBT Modules 600V and 1200V, 150A to 600A
|
IRF[International Rectifier]
|
CM600HA-12H |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
CM75TF-12H |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
CM75BU-12H |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
CM150TU-12H |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
PM30RHC060 |
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 30A I(C) Intellimod-3 Modules: Three Phase Brake, IGBT Inverter Output 30 Amp, 110-230 Volt Line
|
Powerex Power Semiconductors
|
VIO130-06P1 VII130-06P1 VDI130-06P1 VID130-06P1 IX |
IGBT Modules From old datasheet system IGBT Modules: Buck Configurated IGBT Modules IGBT Modules: Boost Configurated IGBT Modules
|
IXYS[IXYS Corporation]
|
PDMB150A6 |
IGBT MODULE Dual 150A 600V 150 A, 600 V, N-CHANNEL IGBT
|
Nihon Inter Electronics, Corp. NIEC[Nihon Inter Electronics Corporation]
|
CM150E3U-12H |
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型 IGBT Modules: 600V
|
Mitsubishi Electric, Corp. Mitsubishi Electric Semiconductor Mitsubishi Electric Corporation
|
RN2112FT RN2113FT |
IGBT Modules up to 600V Dual; Package: PG-LQFP-64; Max Clock Frequency: 40.0 MHz; SRAM (incl. Cache): 8.0 KByte; CAN Nodes: 2; A / D input lines TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
MID100-12A3 MID200-12A4 |
IGBT Modules 135 A, 1200 V, N-CHANNEL IGBT IGBT Modules - Short Circuit SOA Capability Square RBSOA 270 A, 1200 V, N-CHANNEL IGBT
|
IXYS, Corp.
|