PART |
Description |
Maker |
KM684000LI KM684000LI-10 KM684000LI-10L KM684000LI |
512Kx8 bit CMOS static RAM, 85ns, low power Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 524288亩字× 8位高速CMOS静态RAM 524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 524288亩字× 8位高速CMOS静态RAM RES 1.6K-OHM 1% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA 512Kx8 bit CMOS static RAM, 100ns, low power 512Kx8 bit CMOS static RAM, 70ns, low power
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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KM684000A |
512Kx8 bit Low Power CMOS Static RAM(512K x 8浣?????CMOS ???RAM)
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SAMSUNG SEMICONDUCTOR CO. LTD.
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K6R4008C1C-C K6R4008C1C-C10 K6R4008C1C-C12 K6R4008 |
CMOS SRAM 512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges.
|
Samsung semiconductor
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KM684002AE |
512Kx8 Bit High Speed Static RAM
|
Samsung
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UPD431000AGU-70LL-9JH UPD431000AGU-70LL-9KH UPD431 |
1M-bit (128K-word by 8-bit) CMOS static RAM, 70ns 1M-bit (128K-word by 8-bit) CMOS static RAM, 100ns 1M-bit (128K-word by 8-bit) CMOS static RAM, 120ns 1M-bit (128K-word by 8-bit) CMOS static RAM, 150ns
|
NEC
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IS61LV5128-10 IS61LV5128-10B IS61LV5128-10BI IS61L |
IC,SRAM,512KX8,CMOS,TSOP,44PIN,PLASTIC 512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO44 512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 15 ns, PBGA36 512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO36 512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 10 ns, PBGA36 512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 10 ns, PDSO36
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ISSI[Integrated Silicon Solution, Inc] ISSI [Integrated Silicon Solution, Inc] ISSI[Integrated Silicon Solution Inc] Integrated Silicon Solution Inc Integrated Silicon Solution, Inc.
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IDT71V416S10PHG IDT71V416S10PHGI IDT71V416S12PHG I |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 15 ns, PBGA48 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 10 ns, PDSO44
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IDT[Integrated Device Technology] Integrated Device Technology, Inc.
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IC62VV1008LL IC62VV1008L IC62VV1008L-100B IC62VV10 |
70ns; 1.8V; 1M x 8 ultra low power CMOS static RAM 1 M x 8 bit Low Voltage and Ultra Low Power CMOS Static RAM ASYNCHRONOUS STATIC RAM, Low Power A.SRAM 100ns; 1.8V; 1M x 8 ultra low power CMOS static RAM
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ICSI[Integrated Circuit Solution Inc]
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UPD4265400G5-A50 UPD4265400G5-A60 UPD4265400G5-A70 |
2M x 8 Static RAM 256K x 4 Static RAM x4快速页面模式的DRAM 512K x 32 Static RAM x4快速页面模式的DRAM 3.3V 16K/32K x 36 FLEx36™ Synchronous Dual-Port Static RAM x4快速页面模式的DRAM x4 Fast Page Mode DRAM x4快速页面模式的DRAM 512K x 24 Static RAM x4快速页面模式的DRAM 2-Mbit (128K x 16) Static RAM x4快速页面模式的DRAM 128K x 8 Static RAM 128K的8静态RAM x4FastPageModeDRAM
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Elpida Memory, Inc. EPCOS AG STMicroelectronics N.V. NEC, Corp.
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K6R1016C1D-JECII10/12 K6R1016V1D-JTICI08/10 K6R101 |
64K*16 bit high-speed CMOS static RAM operated at commercial and industrial temperature ranges 128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating) Data Sheet 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 在商业和工业温度范围运作64Kx16位高速CMOS静态RAM3.3V的) 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 64Kx16位高速CMOS静态RAM.3V的)在商业和工业温度范围操作
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Samsung Electronic Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
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KM6264B KM6264BLP-7L KM6264BLG-10 KM6264BLG-10L KM |
8K x 8 bit CMOS static RAM, 100ns, low low power 8K x 8 bit Low Power CMOS Static RAM 8Kx8 bit Low Power CMOS Static RAM 8Kx8位低功耗CMOS静态RAM
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Samsung Electronic SAMSUNG[Samsung semiconductor] Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
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