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For oxide Found Datasheets File :: 6673 Search Time::1.688ms
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				SST[Silicon Storage Technology, Inc]
Part No.	SST39VF016 SST39VF016-55-4C-B3I SST39VF016-55-4C-B3K SST39VF016-55-4C-EI SST39VF016-55-4C-EK SST39VF016-55-4I-B3I SST39VF016-55-4I-B3K SST39VF016-55-4I-EI SST39VF016-55-4I-EK SST39VF016-70-4C-B3I SST39VF016-70-4C-B3K SST39VF016-70-4C-EI SST39VF016-70-4C-EK SST39VF016-70-4I-B3I SST39VF016-70-4I-B3K SST39VF016-70-4I-EI SST39VF016-70-4I-EK SST39VF016-90-4C-B3I SST39VF016-90-4C-B3K SST39VF016-90-4C-EI SST39VF016-90-4C-EK SST39VF016-90-4I-B3I SST39VF016-90-4I-B3K SST39VF016-90-4I-EI SST39VF016-90-4I-EK SST39LF080 SST39LF080-55-4C-B3I SST39LF080-55-4C-B3K SST39LF080-55-4C-EI SST39LF080-55-4C-EK SST39LF080-55-4I-B3I SST39LF080-55-4I-B3K SST39LF080-55-4I-EI SST39LF080-55-4I-EK SST39LF080-70-4C-B3I SST39LF080-70-4C-B3K SST39LF080-70-4C-EI SST39LF080-70-4C-EK SST39LF080-70-4I-B3I SST39LF080-70-4I-B3K SST39LF080-70-4I-EI SST39LF080-70-4I-EK SST39LF080-90-4C-B3I SST39LF080-90-4C-B3K SST39LF080-90-4C-EI SST39LF080-90-4C-EK SST39LF080-90-4I-B3I SST39LF080-90-4I-B3K SST39LF080-90-4I-EI SST39LF080-90-4I-EK SST39VF080 SST39VF080-55-4C-B3I SST39VF080-55-4C-B3K SST39VF080-55-4C-EI SST39VF080-55-4C-EK SST39VF080-55-4I-B3I SST39VF080-55-4I-B3K SST39VF080-55-4I-EI SST39VF080-55-4I-EK SST39VF080-70-4C-B3
OCR Text	...plit-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF080/016 write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF080/016 write ...
Description	8 Mbit (x8) multi-purpose flash 8 Mbit / 16 Mbit (x8) Multi-Purpose Flash 8 Mbit / 16 Mbit ( x8 ) Multi-purpose Flash
File Size	294.87K / 26 Page	View it Online	Download Datasheet

				GE[General Semiconductor]
Part No.	AS3024 AS3028
OCR Text	...erature stability due to unique oxide passivation Patented Passivated Anisotropic Rectifier (PAR) construction Integrally molded heatsink provides a very low thermal resistance for maximum heat dissipation Low leakage current at TJ=175C ...
Description	AVALANCHE ALTERNATOR RECTIFIER PASSIVATED ANISOTROPIC RECTIFIER TECHNOLOGY
File Size	92.11K / 1 Page	View it Online	Download Datasheet

				GE Security, Inc. GE[General Semiconductor]
Part No.	AS3524 AS3528 AS3524ANDAS3528
OCR Text	...erature stability due to unique oxide passivation Patented Passivated Anisotropic Rectifier (PAR) construction Integrally molded heatsink provides a very low thermal resistance for maximum heat dissipation Low leakage current at TJ=175C ...
Description	AVALANCHE ALTERNATOR RECTIFIER PASSIVATED ANISOTROPIC RECTIFIER TECHNOLOGY
File Size	114.36K / 2 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUK7608-55
OCR Text	...) to prevent damage to MOS gate oxide. 2. Epoxy meets UL94 V0 at 1/8". April 1998 7 Rev 1.000 Philips Semiconductors Product specification TrenchMOSTM transistor Standard level FET DEFINITIONS Data sheet status Objective...
Description	TrenchMOS transistor Standard level FET
File Size	65.96K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors Philips Semiconductors
Part No.	BUK9608-55
OCR Text	...) to prevent damage to MOS gate oxide. 2. Epoxy meets UL94 V0 at 1/8". April 1998 7 Rev 1.000 Philips Semiconductors Product specification TrenchMOSTM transistor Logic level FET DEFINITIONS Data sheet status Objective sp...
Description	TrenchMOS transistor Logic level FET
File Size	68.11K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRF640A
OCR Text	oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 (Typ.) 1 2 3 IRF640A BVDSS = 200 V RDS(on) = 0.18 ID = 18 A TO-220 1...
Description	Advanced Power MOSFET
File Size	259.33K / 7 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF140
OCR Text	...etween the terminals. The metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to-source (Cgs). The PN junction formed during the fabrication of the RF MOSFET results in a junction capacitance from drain-t...
Description	N-CHANNEL MOS LINEAR RF POWER FET
File Size	162.25K / 6 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF141G
OCR Text	...d from the source by a layer of oxide. The input resistance is very high -- on the order of 109 ohms -- resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage slightly in excess of the g...
Description	N-CHANNEL BROADBAND RF POWER MOSFET
File Size	141.68K / 6 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF148
OCR Text	...etween the terminals. The metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to-source (Cgs). The PN junction formed during the fabrication of the RF MOSFET results in a junction capacitance from drain-t...
Description	N-CHANNEL MOS LINEAR RF POWER FET
File Size	145.04K / 6 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF150
OCR Text	...etween the terminals. The metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to-source (Cgs). The PN junction formed during the fabrication of the RF MOSFET results in a junction capacitance from drain-t...
Description	N-CHANNEL MOS LINEAR RF POWER FET
File Size	146.86K / 6 Page	View it Online	Download Datasheet

For oxide Found Datasheets File :: 6673 Search Time::1.688ms
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