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  oxide Datasheet PDF File

For oxide Found Datasheets File :: 7923    Search Time::5.172ms    
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    UPD16655 UPD16655N UPD16655N-XXX

NEC Corp.
NEC[NEC]
Part No. UPD16655 UPD16655N UPD16655N-XXX
OCR Text ...n cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control ...
Description LIQUID CRYSTAL DISPLAY DRIVER, UUC251
LCD Display Driver
240-OUTPUT TFT-LCD GATE DRIVER

File Size 69.71K  /  12 Page

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    UPD3753 UPD3753CY

NEC[NEC]
Part No. UPD3753 UPD3753CY
OCR Text ...n cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control ...
Description 2088-BIT CCD LINEAR IMAGE SENSOR WITH PERIPHERAL CIRCUIT

File Size 220.64K  /  16 Page

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    2SK3299 2SK3299-S 2SK3299-ZJ D14060EJ1V0DS00 2SK3299-ZJ-E2 2SK3299-Z-E1 2SK3299-Z

NEC, Corp.
NEC Corp.
NEC[NEC]
Part No. 2SK3299 2SK3299-S 2SK3299-ZJ D14060EJ1V0DS00 2SK3299-ZJ-E2 2SK3299-Z-E1 2SK3299-Z
OCR Text ...n cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 2.80.2 1.Gate 2....
Description Switching N-channel power MOS FET industrial use N沟道 开关功率场效应晶体工业
From old datasheet system
N-ch Power MOS FET

File Size 76.83K  /  8 Page

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    2SK410

Hitachi Semiconductor
Part No. 2SK410
OCR Text ...ON: OPERATING HAZARDS Beryllium oxide Ceramics have been employed in these products. Since dust or fume of the material is highly poison to the human body, please do not treat them mechanically or chemically in the manner which might expose...
Description RF POWER, FET
From old datasheet system
Silicon N-Channel MOS FET (HF/VHF power amplifier)

File Size 50.08K  /  10 Page

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    74HC4049 74HC4049N 74HC4049D 74HC4049NB 74HC4049U

PHILIPS[Philips Semiconductors]
Part No. 74HC4049 74HC4049N 74HC4049D 74HC4049NB 74HC4049U
OCR Text ... for HC4049. Single sided thick oxide field effect metal gate transistor as input protection. Fig.6 Logic diagram (one level shifter). FUNCTION TABLE INPUT nA L H Notes 1. H = HIGH voltage level L = LOW voltage level OUTPUT nY H L ...
Description Hex inverting high-to-low level shifter

File Size 41.48K  /  7 Page

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    74HC4050 74HC4050PW 74HC4050D 74HC4050N

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. 74HC4050 74HC4050PW 74HC4050D 74HC4050N
OCR Text ... for HC4050. Single sided thick oxide field effect metal gate transistor as input protection. Fig.6 Logic diagram (one level shifter). FUNCTION TABLE (1) INPUT nA L H Note 1. H = HIGH voltage level L = LOW voltage level OUTPUT nY L H ...
Description Hex high-to-low level shifter(六反相高到低电平移位 六角高向低电平转换器(六反相高到低电平移位器

File Size 40.60K  /  7 Page

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    BLV2045N

NXP Semiconductors
Philips Semiconductors
Part No. BLV2045N
OCR Text ...This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. Aft...
Description UHF power transistor

File Size 75.44K  /  12 Page

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    DM74ALS541 DM74ALS541N DM74ALS541SJ DM74ALS541WM DM74ALS541SJX DM74ALS541WMX

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Part No. DM74ALS541 DM74ALS541N DM74ALS541SJ DM74ALS541WM DM74ALS541SJX DM74ALS541WMX
OCR Text ... state. Features s Advanced oxide-isolated ion-implanted Schottky TTL process s Switching performance is guaranteed over full temperature and VCC supply range s Data flow-thru pinout (all inputs on opposite side from outputs) s P-N-P In...
Description Octal Buffers and Line Drivers with 3-STATE Outputs
Octal Buffer and Line Driver with 3-STATE Outputs
8-Bit Non-Inverting Buffer/Driver

File Size 61.40K  /  6 Page

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    IMX29F002BPI-70 IMX29F002BTI-70 IMX29F002TQI-70 MX29F002 MX29F002BPC-12 MX29F002BPC-55 MX29F002BPC-70 MX29F002BPC-90 MX2

Macronix International
Part No. IMX29F002BPI-70 IMX29F002BTI-70 IMX29F002TQI-70 MX29F002 MX29F002BPC-12 MX29F002BPC-55 MX29F002BPC-70 MX29F002BPC-90 MX29F002BPI-12 MX29F002BPI-90 MX29F002BQC-12 MX29F002BQC-55 MX29F002BQC-70 MX29F002BQC-90 MX29F002BQI-12 MX29F002BQI-70 MX29F002BQI-90 MX29F002BTC-12 MX29F002BTC-55 MX29F002BTC-70 MX29F002BTC-90 MX29F002BTI-12 MX29F002BTI-90 MX29F002NBPC-12 MX29F002NBPC-55 MX29F002NBPC-70 MX29F002NBPC-90 MX29F002NBPI-12 MX29F002NBPI-70 MX29F002NBPI-90 MX29F002NBQC-12 MX29F002NBQC-55 MX29F002NBQC-70 MX29F002NBQC-90 MX29F002NBQI-12 MX29F002NBQI-70 MX29F002NBQI-90 MX29F002NBTC-12 MX29F002NBTC-55 MX29F002NBTC-70 MX29F002NBTC-90 MX29F002NBTI-12 MX29F002NBTI-70 MX29F002NBTI-90 MX29F002NTPC-12 MX29F002NTPC-55 MX29F002NTPC-70 MX29F002NTPC-90 MX29F002NTPI-12 MX29F002NTPI-70 MX29F002NTPI-90 MX29F002NTQC-12 MX29F002NTQC-55 MX29F002NTQC-70 MX29F002NTQC-90 MX29F002NTQI-12 MX29F002NTQI-70 MX29F002NTQI-90 MX29F002NTTC-12 MX29F002NTTC-55 MX29F002NTTC-70 MX29F002NTTC-90 MX29F002NTTI-12 MX29F002NTTI-70 MX29F002NTTI-90 MX29F002TPC-12 MX29F002TPC-55 MX29F002TPC-70 MX29F002TPC-90 MX29F002TPI-12 MX29F002TPI-70 MX29F002TPI-90 MX29F002TQC-12 MX29F002TQC-55 MX29F002TQC-70 MX29F002TQC-90 MX29F002TQI-12 MX29F0
OCR Text ... combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The MX29F002T/B uses a 5.0V 10% VCC supply to perform the High Reliability Erase and auto Pro...
Description 2M-BIT [256K x 8] CMOS FLASH MEMORY

File Size 908.83K  /  49 Page

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