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LM324 100JP RN1224 92C32 CSC2371N 2SB1033 GP30A TC4510
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  2.54mm Datasheet PDF File

For 2.54mm Found Datasheets File :: 492    Search Time::1.703ms    
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    Linear
Part No. LTC1068-25 106825I
OCR Text ...LASH SHALL NOT EXCEED 0.010" (0.254mm) PER SIDE RELATED PARTS PART NUMBER LTC1068 LTC1068-50 LTC1068-200 LTC1064 LTC1164 LTC1264 DESCRIPTION Low Noise Universal Filter Low Power Universal Filter Universal Filter Universal Filter Low Pow...
Description High Speed, Low Noise Quad Universal Filter Building Block
From old datasheet system

File Size 181.89K  /  4 Page

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    AMSREF-01E AMSREF-01EP AMSREF-01ES AMSREF-01H AMSREF-01HP AMSREF-01HS AMSREF-01CS AMSREF-01CP

Advanced Monolithic Systems, Inc.
ADMOS[Advanced Monolithic Systems]
Part No. AMSREF-01E AMSREF-01EP AMSREF-01ES AMSREF-01H AMSREF-01HP AMSREF-01HS AMSREF-01CS AMSREF-01CP
OCR Text ...LASH SHALL NOT EXCEED 0.010" (0.254mm) PER SIDE 8 LEAD PLASTIC DIP PACKAGE (P) 0.400* (10.160) MAX 8 7 6 5 0.2550.015* (6.4770.381) 1 2 3 4 0.045-0.065 (1.143-1.651) 0.1300.005 (3.3020.127) 0.300-0.325 (7.620-8...
Description 10V PRECISION VOLTAGE REFERENCE 10V的高精度电压基准

File Size 46.28K  /  5 Page

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    HMC460

美国讯泰微波有限公司上海代表
HITTITE[Hittite Microwave Corporation]
Part No. HMC460
OCR Text ... from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish th...
Description 800000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, DC - 20.0 GHz

File Size 278.40K  /  8 Page

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    HMC462

美国讯泰微波有限公司上海代表
HITTITE[Hittite Microwave Corporation]
Part No. HMC462
OCR Text ... from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish th...
Description GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.0 - 20.0 GHz

File Size 190.85K  /  6 Page

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    HMC463

美国讯泰微波有限公司上海代表
HITTITE[Hittite Microwave Corporation]
Part No. HMC463
OCR Text ... from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish th...
Description 800000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, DC - 20.0 GHz

File Size 275.75K  /  8 Page

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    HMC464

美国讯泰微波有限公司上海代表
HITTITE[Hittite Microwave Corporation]
Part No. HMC464
OCR Text ... from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish th...
Description 800000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN
GaAs PHEMT MMIC POWER AMPLIFIER, 2.0 - 20.0 GHz

File Size 230.46K  /  6 Page

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    HMC465

美国讯泰微波有限公司上海代表
HITTITE[Hittite Microwave Corporation]
Part No. HMC465
OCR Text ... from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish th...
Description 800000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN
GaAs PHEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 20.0 GHz

File Size 285.41K  /  8 Page

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    HMC490

HITTITE[Hittite Microwave Corporation]
Part No. HMC490
OCR Text ... from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish th...
Description GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER/ 12 - 17 GHz
GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 17 GHz

File Size 214.90K  /  8 Page

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    HMC498

HITTITE[Hittite Microwave Corporation]
Part No. HMC498
OCR Text ... from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish th...
Description GaAs PHEMT MMIC POWER AMPLIFIER/ 17 - 24 GHz
GaAs PHEMT MMIC POWER AMPLIFIER, 17 - 24 GHz

File Size 207.55K  /  8 Page

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    HMC499

HITTITE[Hittite Microwave Corporation]
Part No. HMC499
OCR Text ... from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish th...
Description GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 21 - 32 GHz

File Size 215.15K  /  8 Page

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