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INTEGRATED DEVICE TECHNOLOGY INC
ICST[Integrated Circuit Systems]
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| Part No. |
M672-8-AA M672-4-AA M672-2-AZ M672 M672-2-BA
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| OCR Text |
...put frequency Low phase jitter 0.2ps rms typical (50kHz to 80MHz) Differential 3.3V LVPECL output Single 3.3V power supply Small 5 x 7.5...8, or 2) is specified as part of the order number (format is M672-d-xx).
Figure 2: Block Diagram
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| Description |
VOLTAGE CONTROLLED CLOCK SAW OSCILLATOR, 155.52 MHz
VCSO WITH SELECTABLE OUTPUT FREQUENCY DIVIDER
From old datasheet system
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| File Size |
143.33K /
4 Page |
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Vanguard International Semiconductor Corporation
Vanguard International Semiconductor, Corp.
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| Part No. |
VG3617161ET-8 VG3617161ET-7
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| OCR Text |
... . features ? single 3.3v +/- 0.3v power supply ? clock frequency:166mhz, 143mhz, 125mhz ? fully synchronous with all signals referenc...8,& full page) ? programmable wrap sequence (sequential/interleave) ? automatic precharge and co... |
| Description |
CMOS Synchronous Dynamic RAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
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| File Size |
1,145.75K /
69 Page |
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Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
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| Part No. |
MH4S64DBKG-8 MH4S64DBKG-7 MH4S64DBKG-8L
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| OCR Text |
...nge without notice. mit-ds-0338-0.0 description the mh4s64dbkg is 8388608 - word by 64-bit synchronous dram module. this consists of four ...8/full page(programmable) 4 bank operation controlled by ba0,1(bank address) /cas latency- 2/3(progr... |
| Description |
268435456-BIT (4194304 - WORD BY 64-BIT)SynchronousDRAM
CAP USE W/ SERU AU OA BRN 268435456位（4194304 -文字4位）SynchronousDRAM
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| File Size |
693.29K /
55 Page |
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Ecliptek, Corp.
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| Part No. |
G5PA-1-8
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| OCR Text |
...vac; 5a at 30 vdc 100 a inrush (0.3-0.35 ms)/3 a steady state at 125 vac contact material agsno carry current 5a max. operating voltage 250 ...8 100 80% max. 10% min. 110% max. 250mw 9 27.8 324 80% max. 10% min. 110% max. 250mw 12 20.8 577 80%... |
| Description |
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| File Size |
74.74K /
3 Page |
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Toshiba, Corp.
SIEMENS AG
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| Part No. |
HYB39S256800CT-8 HYB39S256400CT-7.5 HYB39S256800CT-7.5 HYB39S256160CT-7.5
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| OCR Text |
...icated with infineon?s advanced 0.17 m 256mbit dram process technology. the device is designed to comply with all industry standards set f...8 full page burst length for sequential wrap around -7.5 -8 units fck 133 125 mhz tck3 7.5 8 ns... |
| Description |
256Mb (64M x 4) PC133 3-3-3
256Mb (32M x 8) PC133 3-3-3
256Mb (32M x 8) PC100 2-2-2 56Mb的（32M的8）PC100-2-2
x16 SDRAM x16内存
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| File Size |
315.34K /
50 Page |
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