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    UPD72020GC-8-3B6

ETC
Part No. UPD72020GC-8-3B6
OCR Text ...CARACTER CLOCK ;CPU ADDRESS BUS 0 ;LIGHT-PEN STROBE/DRAWING-WAIT/ DATA TRASFER ;CPU READ STROBE ;CPU WRITE STROBE ;ATTRIBUTE BLINK-CLEAR ...8 2xCCLK ;DISPLAY MEMORY ADDRESS ;DISPLAY MEMORY ADDRESS/ DATA BUS 0 to 15 ;DMA ACKNOWLEDGE ;CPU ...
Description CMOS Graphic Display Controller

File Size 95.14K  /  3 Page

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    HM514260CJ-8 HM514260CLJ-7 HM514260CLJ-8 HM514260CTT-7 HM514260CTT-8 HM514260CTT-6 HM514260CTT-6R HM514260C HM51S4260CTT

HITACHI[Hitachi Semiconductor]
Part No. HM514260CJ-8 HM514260CLJ-7 HM514260CLJ-8 HM514260CTT-7 HM514260CTT-8 HM514260CTT-6 HM514260CTT-6R HM514260C HM51S4260CTT-8 HM514260CLJ-6 HM514260CLJ-6R HM514260CLTT-6 HM514260CLTT-6R HM514260CLTT-7 HM514260CLTT-8 HM51S4260C HM51S4260CJ-6 HM51S4260CJ-6R HM51S4260CJ-7 HM51S4260CJ-8 HM51S4260CLJ-6 HM51S4260CLJ-6R HM51S4260CLJ-7 HM51S4260CLJ-8 HM51S4260CLTT-6 HM51S4260CLTT-6R HM51S4260CLTT-7 HM51S4260CLTT-8 HM51S4260CTT-6 HM51S4260CTT-6R HM51S4260CTT-7
OCR Text 0 Jun. 12, 1995 Description The Hitachi HM51(S)4260C is CMOS dynamic RAM organized as 262,144-word x 16-bit. HM51(S)4260C has realized h...8 m CMOS process technology and some new CMOS circuit design technologies. The HM51(S)4260C offers f...
Description 80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
262,144-WORD X 16-BIT DYNAMIC RANDOM ACCESS MEMORY
60ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory

File Size 260.25K  /  27 Page

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    HYS64D16000GDL-8-B HYS64D16000GDL-6-B HYS64D16000GDL-7-B HYS64D16001GDL-6-B HYS64D16001GDL-7-B HYS64D32020GDL-8-B HYS64D

INFINEON[Infineon Technologies AG]
Part No. HYS64D16000GDL-8-B HYS64D16000GDL-6-B HYS64D16000GDL-7-B HYS64D16001GDL-6-B HYS64D16001GDL-7-B HYS64D32020GDL-8-B HYS64D32020GDL HYS64D32020GDL-5-B HYS64D32020GDL-6-B HYS64D32020GDL-7-B
OCR Text 0 2 0 G D L - [ 5 / 6 / 7 / 8 ] - B H Y S 64 D 1 6 0 0 x G D L - [ 6 / 7 / 8 ] - B 200- Pi n Small Outli ne Dual -In- Line Memor y Modules S O -D I M M DDR SDRAM M e m or y P r o du c t s Never stop thinking. Edition 2003-08...
Description DDR SDRAM Modules - 256MB (32Mx64) PC3200 2-bank
DDR SDRAM Modules - 128MB (16Mx64) PC2700 1-bank
DDR SDRAM Modules - 128MB (16Mx64) PC2100 1-bank
DDR SDRAM Modules - 256MB (32Mx64) PC2100 2-bank
200-Pin Small Outline Dual-In-Line Memory Modules

File Size 433.11K  /  31 Page

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    KM4132G271BTQ-8 KM4132G271BTQ_R-8 KM4132G271B KM4132G271BQ_R-10 KM4132G271BQ_R-7 KM4132G271BQ_R-8 KM4132G271BTQ_R-10 KM4

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. KM4132G271BTQ-8 KM4132G271BTQ_R-8 KM4132G271B KM4132G271BQ_R-10 KM4132G271BQ_R-7 KM4132G271BQ_R-8 KM4132G271BTQ_R-10 KM4132G271BTQ_R-7 KM4132G271BTQR-10 KM4132G271BTQR-8 KM4132G271BQR-8 KM4132G271BTQR-7 KM4132G271BQR-10
OCR Text ...CKAGE DIMENSIONS. Revision 2.0 (October 1997) * Added -H binning(100MHz @ CL =2 ). * Changed some values in DC CHARACTERISTICS. * Change...8 & full page) -. Burst Type (Sequential & Interleave) All inputs are sampled at the positive going ...
Description 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL

File Size 1,032.84K  /  51 Page

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    MCK100-8

SemiWell Semiconductor
Part No. MCK100-8
OCR Text ...M.S On-State Current ( IT(RMS)= 0.8 A ) Low On-State Voltage (1.2V(Typ.)@ ITM) 1 2 3 2. Anode 1. Cathode SOT- 89 General Description Sensitive triggering SCR is suitable for the application where gate current limite...
Description Sensitive Gate Silicon Controlled Rectifiers

File Size 533.19K  /  5 Page

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    SAMTEC INC
Part No. CM-150-02-L-Q-397-8
OCR Text 0 p a r k e a s t b l v d , n e w a l b a n y , i n 4 7 1 5 0 p h o n e : 8 1 2 . 9 4 4 . 6 7 3 3 f a x : 8 1 2 . 9 4 8 . 5 0 4 7 e - m a i l : i n f o @ s a m t e c . c o ...
Description 168 CONTACT(S), MALE, POWER CONNECTOR, SOLDER

File Size 761.86K  /  2 Page

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    NEC Corp.
NEC[NEC]
Part No. NE8500295-8 NE8500295-6 NE8500295-4 NE85002 NE8500200 NE8500200-RG NE8500200-WB NE8500200-WB-A
OCR Text ...with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped element matching network. NE8500200 ...8 33.8 min 8.0 min 5.9 0.2 33.8 min 33.8 min 33.5 min 10.5 min 9.5 min 8.0 min 3.5...
Description 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
C BAND, GaAs, N-CHANNEL, RF POWER, MESFET

File Size 47.52K  /  8 Page

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    SMP75-8

意法半导
STMicroelectronics
Part No. SMP75-8
OCR Text ...ameter 10/1000s 8/20s 50Hz 60Hz 0.2s 2s Value 75 250 35 37 14 6 260 - 55 to + 150 150 Unit A A A A A A C C C THERMAL RESISTANCES Symbol Rth(j-I) Rth(j-a) Junction to leads Junction to ambient on printed circuit (with standard footprint d...
Description TRISILTM
TRISIL TM

File Size 62.33K  /  6 Page

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    MAC210-8 MAC210-10 MAC210-4 MAC210-6 MAC210A10 MAC210A6 MAC210A8 MAC210A4

MOTOROLA INC
Motorola, Inc.
Part No. MAC210-8 MAC210-10 MAC210-4 MAC210-6 MAC210A10 MAC210A6 MAC210A8 MAC210A4
OCR Text ...PGM PG(AV) IGM TJ Tstg 40 20 0.35 2 -40 to +125 -40 to +125 A2s Watts Watt Amps C C (1) VDRM for all types can be applied on a cont...8.0 IT(RMS), RMS ON-STATE CURRENT (AMPS) 2.0 9.0 10.0 14.0 CONDUCTION ANGLE = 360 12.0 10.0 8.0 6.0 ...
Description TRIACs 10 AMPERES RMS 200 thru 800 VOLTS

File Size 67.01K  /  4 Page

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