PART |
Description |
Maker |
IDW10G120C5B |
Revolutionary semiconductor material - Silicon Carbide
|
Infineon Technologies A...
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IDW15G120C5B |
Revolutionary semiconductor material - Silicon Carbide
|
Infineon Technologies A...
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GVT73128A16 73128A16 |
REVOLUTIONARY PINOUT 128K X 16 From old datasheet system
|
Galvantech
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AS5C512K8ECJ-35/H AS5C512K8ECJ-17L/H AS5C512K8ECJ- |
512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT 12k × 8的SRAM高速SRAM和革命引脚排 LED, GRN SMT, 1206 µP-Compatible 14-Bit CMOS DAC; Package: PLCC; No of Pins: 20; Temperature Range: Commercial Circular Connector; No. of Contacts:37; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:28; Circular Contact Gender:Pin; Circular Shell Style:Right Angle Plug; Insert Arrangement:28-21 RoHS Compliant: No CAT5 STP BACKBONE CABLE STRAIGHT PIN, PLN-GRAY 512K x 8 SRAM - high speed with revolutionary pinout
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Electronic Theatre Controls, Inc. Austin Semiconductor http://
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SPP04N80C3 SPP04N80C308 |
CoolMOSTM Power Transistor Features New revolutionary high voltage technology
|
Infineon Technologies AG
|
SPP17N80C3 SPP17N80C308 |
CoolMOS Power Transistor Features New revolutionary high voltage technology
|
Infineon Technologies AG
|
SPP02N80C3 SPP02N80C308 |
CoolMOSTM Power Transistor Features New revolutionary high voltage technology
|
Infineon Technologies AG
|
IDT71V124S20 IDT71V124S15 IDT71V124S20YI IDT71V124 |
3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout
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Integrated Device Techn... IDT[Integrated Device Technology] Integrated Device Technology, Inc.
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SPP02N60C3 SPP02N60C307 SPP02N60C309 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG Infineon Technologies A...
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EDI8F82046C |
2 Megabits x 8 Static RAM CMOS, Module with Revolutionary Pinout(2Mx8 CMOS静态RAM模块)
|
White Electronic Designs Corporation
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SPP20N60CFD05 SPP20N60CFD |
Cool MOS Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|