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Icemos Technology
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| Part No. |
ICE60N160B
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| OCR Text |
... fundamental patents for superjunction mosfets . the majority of these patents have 17 to 20 years of remaining life . this portfolio has granted patents issued in usa, china, korea, ... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
483.46K /
9 Page |
 View
it Online |
Download Datasheet
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Icemos Technology
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| Part No. |
ICE47N65W
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| OCR Text |
... fundamental patents for superjunction mosfets . the majority of these patents have 17 to 20 years of remaining life . this portfolio has granted patents issued in usa, china, korea, ... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
542.02K /
8 Page |
View
it Online |
Download Datasheet |
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Icemos
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| Part No. |
ICE4N70
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| OCR Text |
... fundamental patents for superjunction mosfets . the majority of these patents have 17 to 20 years of remaining life . this portfolio has granted patents issued in usa, china, korea, ... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
575.33K /
9 Page |
View
it Online |
Download Datasheet |
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Icemos
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| Part No. |
ICE47N60W
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| OCR Text |
... fundamental patents for superjunction mosfets . the majority of these patents have 17 to 20 years of remaining life . this portfolio has granted patents issued in usa, china, korea, ... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
560.16K /
8 Page |
View
it Online |
Download Datasheet |
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Icemos Technology
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| Part No. |
ICE30N60W
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| OCR Text |
... fundamental patents for superjunction mosfets . the majority of these patents have 17 to 20 years of remaining life . this portfolio has granted patents issued in usa, china, korea, ... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
539.25K /
8 Page |
View
it Online |
Download Datasheet |
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Icemos Technology
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| Part No. |
ICE35N60W
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| OCR Text |
... fundamental patents for superjunction mosfets . the majority of these patents have 17 to 20 years of remaining life . this portfolio has granted patents issued in usa, china, korea, ... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
539.13K /
8 Page |
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it Online |
Download Datasheet |
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Icemos
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| Part No. |
ICE13N65
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| OCR Text |
... fundamental patents for superjunction mosfets . the majority of these patents have 17 to 20 years of remaining life . this portfolio has granted patents issued in usa, china, korea, ... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
578.69K /
9 Page |
View
it Online |
Download Datasheet |
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Icemos Technology
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| Part No. |
ICE7N60
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| OCR Text |
... fundamental patents for superjunction mosfets . the majority of these patents have 17 to 20 years of remaining life . this portfolio has granted patents issued in usa, china, korea, ... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
555.03K /
9 Page |
View
it Online |
Download Datasheet |
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Icemos Technology
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| Part No. |
ICE2N73D
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| OCR Text |
... fundamental patents for superjunction mosfets . the majority of these patents have 17 to 20 years of remaining life . this portfolio has granted patents issued in usa, china, korea, ... |
| Description |
Enhancement Mode MOSFET
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| File Size |
791.81K /
9 Page |
View
it Online |
Download Datasheet |
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Icemos Technology
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| Part No. |
ICE30N080W
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| OCR Text |
... fundamental patents for superjunction mosfets . the majority of these patents have 17 to 20 years of remaining life . this portfolio has granted patents issued in usa, china, korea, ... |
| Description |
Enhancement Mode MOSFET
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| File Size |
537.96K /
8 Page |
View
it Online |
Download Datasheet |
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