| PART |
Description |
Maker |
| 19025-0002 19025-0008 64001-1400 64001-1700 64001- |
.187 Tab Size Nylon Insulated and Fully Insulated Quick Disconnect Solderless Terminals
|
MolexKits
|
| CM600HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Powerex, Inc.
|
| BCR16B BCR16C BCR16E |
MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
|
| 19022-0018 19022-0022 64001-0100 64001-0200 19016- |
.110, .187 and .250 Tab Size Non-Insulated and PVC Insulated Quick Disconnect Solderless Terminals, With Universal Crimp Tool
.110", .187" and .250" Tab Size Non-Insulated and PVC Insulated Quick Disconnect Solderless Terminals, With Universal Crimp Tool
|
http://
MolexKits
|
| 0190130026 SD-19013-001 AA-2317T |
InsulKrimp?/a> Fully Insulated
InsulKrimp Fully Insulated
MOLEX Connector
|
Molex Electronics Ltd.
|
| QM75E3Y-H QM75E2Y-H |
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| IRG4RC10UPBF IRG4RC10UTRPBF IRG4RC10UPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR
Generation 4 IGBT design provides tighter parameter distribution and higher effciency than previous generation
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
| 2-1191566-7 2-1190527-4 2-1191560-6 014389-000 2-1 |
WIRE, RADIATION-CROSSLINKED, MODIFIED, ETFE-INSULATED, TIN-COATEDCOPPER, LIGHTWEIGHT
WIRE, RADIATION-CROSSLINKED, MODIFIED, ETFE-INSULATED, TIN-COATEDCOPPER, LIGHTWEIGHT
WIRE, RADIATION-CROSSLINKED, MODIFIED, ETFE-INSULATED, TIN-COATED COPPER, LIGHTWEIGHT
WIRE RADIATIONN-CROSSLINKED, MODIFIED, ETFE-INSULATED, TIN-COATEDCOPPER, LIGHTWEIGHT
|
Tyco Electronics
|
| GT15Q311 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| PM300CVA06005 PM300CVA060 PM300CVA06009 |
FLAT-BASE TYPE INSULATED PACKAGE
INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Sem...
Mitsubishi Electric Semiconductor
|
