PART |
Description |
Maker |
AS8FLC1M32BP-70/IT AS8FLC1M32BQ-100/XT AS8FLC1M32B |
1M X 32 FLASH 3V PROM, 70 ns, CPGA66 HERMETIC SEALED, CERAMIC, HIP-66 1M X 32 FLASH 3V PROM, 100 ns, CQFP68 1M X 32 FLASH 3V PROM, 120 ns, CQFP68
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Micross Components
|
AS29LV002B-120T1C AS29LV002B-120PC |
256K X 8 FLASH 2.7V PROM, 120 ns, PDSO32 256K X 8 FLASH 2.7V PROM, 120 ns, PDIP32
|
ALLIANCE SEMICONDUCTOR CORP
|
AM28F020-120C3EE AM28F020-120C3EI AM28F020-120C3FI |
256K X 8 FLASH 12V PROM, 120 ns, PDSO32 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
|
ADVANCED MICRO DEVICES INC
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E28F256J3C-110 GE28F256J3C-110 E28F256J3C-115 GE28 |
Intel StrataFlash Memory (J3) 英特StrataFlash存储器(J3 Aluminum Electrolytic Radial Lead Audio Grade Capacitor; Capacitance: 2200uF; Voltage: 10V; Case Size: 10x20 mm; Packaging: Bulk 英特尔StrataFlash存储器(J3 Intel StrataFlash Memory (J3) 16M X 16 FLASH 2.7V PROM, 125 ns, PDSO56 Intel StrataFlash Memory (J3) 英特尔StrataFlash存储器(J3 Intel StrataFlash Memory (J3) 8M X 16 FLASH 3V PROM, 150 ns, PDSO56 Intel StrataFlash Memory (J3) 8M X 16 FLASH 2.7V PROM, 120 ns, PBGA64 (TE28FxxxJ3C) Strata Flash Memory Strata Flash Memory / 256 Mbit
|
Intel, Corp. Intel Corp. http:// Intel Corporation
|
AM29DL323GB70WMI AM29DL322GT70WMI AM29DL322GT90EI |
32 megabit CMOS 3.0 volt-only, simultaneous operation flash memory 2M X 16 FLASH 3V PROM, 70 ns, PBGA48 IC Flash Mem PARL 2.7v To 3.6v 32-MBit 2M x 16/4mx8 70ns 48FBGA 2M X 16 FLASH 3V PROM, 70 ns, PBGA48 IC,MEM,FLASH,2MX16,3V,90NS,SIMUL 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
|
Advanced Micro Devices, Inc.
|
AM29F016 AM29F016-90 AM29F016-75 AM29F016-75FIB AM |
LM330 3-Terminal Positive Regulator; Package: TO-220; No of Pins: 3; Qty per Container: 45; Container: Rail 16-Megabit097152*8-bit)CMOS 5.0 Volt-only,sector Erase Flash memory LM32 Dual Thermal Diode Temperature Sensor with SensorPath™ Bus; ; Qty per Container: 1 LM3310 Step-Up PWM DC/DC Converter with Integrated Op-Amp and Gate Pulse Modulation Switch; Package: LLP; No of Pins: 24; Qty per Container: 4500; Container: Reel 16兆位097152 × 8位)CMOS 5.0伏只,扇区擦除闪 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 120 ns, PDSO44 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 90 ns, PDSO48 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 150 ns, PDSO48 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 120 ns, PDSO48
|
Advanced Micro Devices, Inc. SPANSION LLC
|
AS29F010SOJ-150_883C AS29F010SOJ-150_IT AS29F010SO |
128K x 8 FLASH UNIFORM SECTOR 5.0V FLASH MEMORY 128K X 8 FLASH 5V PROM, 120 ns, PDSO32 SOJ-32 128K X 8 FLASH 5V PROM, 60 ns, PDSO32 SOJ-32 128K X 8 FLASH 5V PROM, 150 ns, PDSO32 SOJ-32
|
Austin Semiconductor, Inc
|
AM29DL400BB-70SIB AM29DL400BT-70SIB DL400BB-120EEB |
512K X 8 FLASH 3V PROM, 70 ns, PDSO44 512K X 8 FLASH 3V PROM, 120 ns, PDSO48
|
SPANSION LLC
|
MX29F100TTC-12 MX29F100TTA-12 |
1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY 64K X 16 FLASH 5V PROM, 120 ns, PDSO48
|
Macronix International Co., Ltd.
|
AM29LV640MU101WHI AM29LV640MU101RWHI AM29LV640MU10 |
64 Megabit (4 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with 4M X 16 FLASH 3V PROM, 120 ns, PBGA64
|
Advanced Micro Devices, Inc.
|
IS28F020-120PL IS28F020-120PLI IS28F020-120T IS28F |
262,144 x 8 CMOS FLASH MEMORY 256K X 8 FLASH 12V PROM, 90 ns, PDIP32 262,144 x 8 CMOS FLASH MEMORY 256K X 8 FLASH 12V PROM, 120 ns, PDSO32 CAP 33UF 6V 20% TANT SMD-3216-18 TR-7
|
Integrated Silicon Solution, Inc. ISSI[Integrated Silicon Solution, Inc]
|
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