| PART |
Description |
Maker |
| NX5323EH |
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
|
NEC
|
| NX5311GH NX5311GK NX5311 |
NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 1.25 Gb/s AND FTTH PON APPLICATIONS
|
CEL[California Eastern Labs]
|
| NX5321EH NX5321EK NX5321 |
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE
|
NEC
|
| 2N7002BKW |
60 V, 310 mA N-channel Trench MOSFET 310 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
NXP Semiconductors N.V.
|
| NX5504EK-AZ NX5504EH-AZ NX5504 |
NECs 1550 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR FTTH APPLICATION
|
CEL[California Eastern Labs]
|
| NX5310 NX5310EH-AZ NX5310EK-AZ |
NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/S AND FTTH APPLICATIONS
|
California Eastern Laboratories
|
| G8931-04-15 |
Time response characteristics compatible with SONET and G/GE-PON
|
Hamamatsu Corporation
|
| DS1886T |
SFP and PON ONU Controller with Digital LDD Interface
|
MAXIM - Dallas Semiconductor
|
| FTM-9412P-F10 FTM-9412P-F10DC FTM-9412P-F10E FTM-9 |
(FTM-9412P-x10xx) SFF GE-PON Px10 ONU Transceiver
|
Fiberxon
|
| DS1863E DS1863ER DS1863ET DS1863 DS26522 DS26522G |
Dual T1/E1/J1 Transceiver
Burst-Mode PON Controller With Integrated Monitoring
|
MAXIM[Maxim Integrated Products]
|
| SBH52414XFSAN |
BIDI TM Transceiver Optical Module for ATM-PON ONU Applications,
|
Infineon
|
