PART |
Description |
Maker |
MJE210 |
PNP (COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
SMBTA1407 |
NPN Silicon Darlington Transistor High collector current Low collector-emitter saturation voltage
|
http://
|
BSP60 BSP62 Q62702-P1166 Q62702-P1168 BSP60BSP62 B |
From old datasheet system PNP Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage)
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] Infineon
|
2SA1625 |
High voltage switch. Collector-base voltage: Vcbo = -400V. Collector-emitter voltage: Vceo = -400V. Emitter-base voltage Vebo = -7V. Collector dissipation: Pc(max) = o.75W.
|
USHA India LTD
|
C2611 |
Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
|
TY Semiconductor Co., Ltd
|
2SD1815 |
Low collector-to-emitter saturation voltage. Excllent linearity of hFE.
|
TY Semiconductor Co., L...
|
SMBTA5607 |
PNP Silicon AF Transistor Low collector-emitter saturation voltage
|
Infineon Technologies AG
|
2SB1201 |
Low collector-to-emitter saturation voltage. Fast switching speed.
|
TY Semiconductor Co., Ltd
|
SMBT390608 MMBT3906 SMBT3906S SMBT3906U |
High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage
|
Infineon Technologies AG
|