PART |
Description |
Maker |
M5M5256DFP-70LLI M5M5256DVP-55LL M5M5256DFP-70XL M |
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word位)的CMOS静态RAM Memory>Low Power SRAM
|
Renesas Electronics Corporation. Renesas Electronics, Corp. RENESAS[Renesas Electronics Corporation]
|
M5M5256DP-45LL-1 M5M5256DP-45LL-I M5M5256DP-45XL-I |
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word位)的CMOS静态RAM Octal D-Type Transparent Latches With 3-State Outputs 20-PDIP -40 to 85 262144位(32768 - Word位)的CMOS静态RAM From old datasheet system
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
M5M5279-25 M5M5279-35 M5M5279-35L M5M5279J-20 M5M5 |
294912-BIT (32768-WORD BY 9-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
HN58C256FP-20 |
32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM
|
Hitachi Semiconductor
|
M5M5256DFP-70G M5M5256DFP-70GI M5M5256DVP-70G M5M5 |
32K X 8 STANDARD SRAM, 70 ns, PDSO28 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM Memory>Low Power SRAM
|
Renesas Electronics Corporation
|
M6MGB331S8BKT M6MGT331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
CXK77V3211Q-12 CXK77V3211Q-14 |
32768-word by 32-bit High Speed Synchronous Static
|
SONY
|
CXK5T8257BTM/BYM/BM-12LLX CXK5T8257BTM/BYM/BM-10LL |
32K X 8 STANDARD SRAM, 100 ns, PDSO28 32K X 8 STANDARD SRAM, 120 ns, PDSO28 32768-word x 8-bit High Speed CMOS Static RAM
|
SONY
|
HN62408 HN62408FP HN62408P |
524288-WORD X 16-BIT/1048576-WORD X 8-BIT CMOS MASK PROGRAMMABLE ROM 524288字16-BIT/1048576-WORD × 8位CMOS掩膜可编程ROM
|
Hitachi,Ltd. Hitachi Semiconductor
|
MS52C1162A |
65,536-Word × 16-Bit or 131,072-Word × 8-Bit STATIC RAM 1,048,576-Word × 16-Bit or 2,097,152-Word × 8-Bit One Time PROM(64k字6位或128k字位静态RAM 1M字6位或2M字OTPROM)
|
OKI SEMICONDUCTOR CO., LTD.
|