| PART |
Description |
Maker |
| R1LV0816ASD-5SI R1LV0816ASD-7SI |
8Mb Advanced LPSRAM (512k word x 16bit / 1M word x 8bit)
|
Renesas Electronics Corporation
|
| I1LV3216ISD-5SI I1LV3216ISD-7SI R1LV3216RSD-5S R1L |
32Mb Advanced LPSRAM (2M word x 16bit / 4M word x 8bit)
|
Renesas Electronics Corporation
|
| R1LV0816ABG-5SI |
8Mb Advanced LPSRAM (512k word x 16bit)
|
Renesas Electronics Corporation
|
| RMLV0408E RMLV0408EGSA-5S2 RMLV0414EGSB-5S2 RMLV04 |
4Mb Advanced LPSRAM
|
Renesas Electronics Corporation
|
| RMLV0414E-15 |
4Mb Advanced LPSRAM (256-kword × 16-bit)
|
Renesas Electronics Corporation
|
| RMLV0408E-15 |
4Mb Advanced LPSRAM (512-kword × 8-bit)
|
Renesas Electronics Corporation
|
| M28F220-90M1TR M28F220-90M6TR -M28F220 STMICROELEC |
256K X 8 FLASH 12V PROM, 90 ns, PDSO44
2Mbit (256Kb x8 or 128Kb x16, Boot Block) Flash Memory(2Mb???瀛???ī
256K X 8 FLASH 12V PROM, 70 ns, PDSO44
|
STMICROELECTRONICS
|
| KMM5322104CKU |
2MB X 32 DRAM Simm Using 2MB X 8
|
Samsung Semiconductor
|
| GT28F160B3-T120 GT28F160B3-T150 GT28F400B3-T120 GT |
SMART 3 ADVANCED BOOT BLOCK WORD-WIDE 智能3高级启动块字
SMART 3 ADVANCED BOOT BLOCK WORD-WIDE 1M X 16 FLASH 3V PROM, 150 ns, PBGA48
TRANSFORMER CURRENT 75.0 AMP 智能3高级启动块字
LEAD, N PLG-PLG 50R, 1.2M; Connector type A:N Plug; Connector type B:N Plug; Length, lead:1.2m; Cable type:RG213; Impedance:50R; Coaxial cable type:RG213 RoHS Compliant: Yes
|
http://
Intel, Corp.
ON Semiconductor
Intel Corp.
|
| GS72116TP-10 GS72116TP-15 GS72116TP GS72116J-15 GS |
15ns 128K x 16 2Mb asynchronous SRAM
8ns 128K x 16 2Mb asynchronous SRAM
10ns 128K x 16 2Mb asynchronous SRAM
12ns 128K x 16 2Mb asynchronous SRAM
|
GSI[GSI Technology]
|
