| PART |
Description |
Maker |
| 2SC3932 2SC3932T |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 50MA I(C) | SC-70
Transistors
|
Matsshita / Panasonic
|
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
| AD539SD883B AD539SE883B AD537SD883B |
5V wideband dual-channel linear multiplier/divider. For precise high bandwidth AGC and VGA systems, voltage-controlled filters, video-signal processing
InputV:0-4V; 500mW; integrated circuit voltage-to-frequency converter
|
Analog Devices
|
| ECG105 ECG85 ECG91 ECG90 ECG92 ECG101 |
Pressure (Pa): 770 ( 3.09inchH2O / 75.1 ( 0.30inchH2O ); Noise (dB[A]): 71 / 40; Mass (g): 760;
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 400MA I(C) | TO-92
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50MA I(C) | TO-92VAR
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-92VAR
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 15A I(C) | SIP 晶体管|晶体管| npn型| 200伏五（巴西）总裁| 15A条（c）的|园区
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | TO-5 晶体管|晶体管|叩| 20V的五（巴西）总裁| 300mA的一（c）|
|
NXP Semiconductors N.V.
|
| 2SD2114K 2SD2144S A5800324 2SD2114KW 2SD2144SU 2SD |
High-current Gain MediumPower Transistor (20V/ 0.5A)
High-current Gain MediumPower Transistor (20V, 0.5A)
High-current Gain Medium Power Transistor (20V,0.5A)
From old datasheet system
|
Rohm CO.,LTD.
ROHM[Rohm]
|
| IS725 |
6V, 50mA high CMR, very high speed optically coupled isolator logic gate output
|
ISOCOM
|
| NE32740A NE32708 NE32740B NE32702 NE32700 |
TRANSISTOR | BJT | NPN | 50MA I(C) | MACRO-X
TRANSISTOR | BJT | NPN | 50MA I(C) | MICRO-X
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 50MA I(C) | CHIP 晶体管|晶体管|叩| 12V的五（巴西）总裁| 50mA的一（c）|芯片
|
Panasonic, Corp.
|
| LTC3642IDD-5PBF LTC3642EDD-3.3TRPBF LTC3642IDD-3.3 |
High Efficiency, High Voltage 50mA Synchronous Step-Down Converter; Package: 8-DFN; Temperature Range: -40 to 125C 0.05 A SWITCHING REGULATOR, PDSO8
High Efficiency, High Voltage 50mA Synchronous Step-Down Converter; Package: 8-DFN; Temperature Range: -40 to 125C; Container: Tape and Reel 0.05 A SWITCHING REGULATOR, PDSO8
High Efficiency, High Voltage 50mA Synchronous Step-Down Converter; Package: 8-MSOP; Temperature Range: -40 to 125C; Container: Tape and Reel 0.05 A SWITCHING REGULATOR, PDSO8
|
Linear Technology, Corp.
|
| BY329-1700S |
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Current, It av:6A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
Damper diode fast, high-voltage
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| 2SC4726TLP |
High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz)
|
Rohm
|
| 2SC5662 |
High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz)
|
Rohm
|
| VT1000 |
(VT1000 - VT1500) High Voltage 50mA Silicon Rectifiers
|
Electronic Devices
|
