| PART |
Description |
Maker |
| LP01-333-RM LP01-103-RM LP01-332-RM LP01-473-RM IC |
2.0mV Dual Micropower CMOS Voltage Comparator w/ Open Drain Driver, 8L PDIP 1 ELEMENT, 33 uH, GENERAL PURPOSE INDUCTOR, SMD
2.0mV Dual CMOS Voltage Comparator w/ Push-Pull Driver, 8L SOIC 1 ELEMENT, 10 uH, GENERAL PURPOSE INDUCTOR, SMD
10.0mV Dual Micropower CMOS Voltage Comparator w/ Open Drain Driver, 8L SOIC
|
ICE Components, Inc.
ICE COMPONENTS INC
|
| STB3NA80 4229 STB3NA80T4 |
Resettable Fuse; Series:1210L; Thermistor Type:PTC; Operating Voltage Max:6VDC; Holding Current:0.35A; Tripping Current:0.7A; External Depth:0.85mm; Length:3.43mm; Initial Resistance Min:0.32ohm; Initial Resistance Max:1.3ohm RoHS Compliant: Yes
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
From old datasheet system
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| HA-2620 HA-2626 HA-2625 |
Op Amp, 100MHz, High Input Impedance, Very Wideband, Uncompensated, Offset=0.5mV
Op Amp, 100MHz, High Input Impedance, Very Wideband, Uncompensated, Rad-Hard
Op Amp, 100MHz, High Input Impedance, Very Wideband, Uncompensated, Offset=3.0mV
|
Intersil
|
| OP77BRC/883C |
Next Generation OP07, Ultralow Offset Voltage Operational Amplifier; Package: LCC:CER LEADLESS CHIP CARR; No of Pins: 20; Temperature Range: Military OP-AMP, 120 uV OFFSET-MAX, 0.6 MHz BAND WIDTH, CQCC20
|
Analog Devices, Inc.
|
| AS393MTR-E1 |
LOW POWER LOW OFFSET VOLTAGE DUAL COMPARATORS DUAL COMPARATOR, 7000 uV OFFSET-MAX, 1300 ns RESPONSE TIME, PDSO8
|
BCD Semiconductor Manufacturing, Ltd.
|
| HA-2640 HA-2645 |
Op Amp, 4MHz, High Supply Voltage, 4mV Max Offset Voltage
Op Amp, 4MHz, High Supply Voltage, 6mV Max Offset Voltage
|
Intersil
|
| BM94801KUT |
Initial Program ROM
|
Rohm
|
| 1XPBH2UEENAGX |
CONTACT RESISTANCE: 100m?(INITIAL)
|
E-SWITCH
|
| N800002 |
CONTACT RESISTANCE; 50 m2 MAX INITIAL.
|
E-SWITCH
|
| DFE201210S-1R0M |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30%
|
Murata Manufacturing Co...
|
| 1239AS-H-1R5M 1239AS-H-1R5M-18 |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30%
|
Murata Manufacturing Co...
|
| DFE201610E-1R5M DFE201610E-1R5M-18 |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30%
|
Murata Manufacturing Co...
|
