| PART |
Description |
Maker |
| SMBTA1407 |
NPN Silicon Darlington Transistor High collector current Low collector-emitter saturation voltage
|
http://
|
| BC337 BC337-25 BC337-40 Q62702-C314-V3 BC337-16 BC |
Si-Epitaxial PlanarTransistors
NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) NPN硅晶体管自动对焦（高电流增益高集电极电流低集电极发射极饱和电压）
|
Siemens Semiconductor G...
Diotec Elektronische
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| SMBT2222AE6327HTSA1 |
Low collector-emitter saturation voltage
|
Infineon Technologies AG
|
| 2SD1328 |
Low ON resistance Ron. Low collector-emitter saturation voltage VCE(sat).
|
TY Semiconductor Co., L...
|
| DN100S |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
| 2SC5343UF |
Low collector saturation voltage : VCE=0.25V(Max.) Low output capacitance : Cob=2pF(Typ.)
|
TY Semiconductor Co., L...
|
| 2SB1628 |
High current capacitance. Low collector saturation voltage.
|
TY Semiconductor Co., Ltd
|
| 2SD1820A |
Low collector-emitter saturation voltage VCE(sat).
|
TY Semiconductor Co., Ltd
|
| SMBTA5607 |
PNP Silicon AF Transistor Low collector-emitter saturation voltage
|
Infineon Technologies AG
|
| 2SB1202 |
Low collector-to-emitter saturation voltage. Fast switching speed.
|
TY Semiconductor Co., Ltd
|
| SMBT390608 MMBT3906 SMBT3906S SMBT3906U |
High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage
|
Infineon Technologies AG
|
