| PART |
Description |
Maker |
| JS28F256P33BFA 320003 |
NumonyxTM StrataFlash Embedded Memory P33 (256-Mbit, 256-Mbit/256- Mbit) 130nm to 65nm
|
Numonyx B.V
|
| M36P0R8070E0 M36P0R8070E0ZACE M36P0R8070E0ZACF |
256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package
|
Numonyx B.V
|
| M58LR128KB |
(M58LRxxxKx) 128 or 256 Mbit 1.8 V supply Flash memories
|
Numonyx
|
| S29PL-N07 S29PL127N65GFW000 S29PL129N65GFW000 S29P |
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
|
SPANSION
|
| S29PL129N70FFW002 S29PL127N65GFIW02 |
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
|
SPANSION
|
| ST93C57B1013TR ST93C57B1TR ST93C57B3013TR ST93C57B |
2K 128 x 16 or 256 x 8 SERIAL MICROWIRE EEPROM
2K 128 x 16 or 256 x 8 SERIAL MICROWIRE EEPROM 2K 128 x 1656 × 8 MICROWIRE的串行EEPROM
2K (128 x 16 or 256 x 8) SERIAL MICROWIRE EEPROM
|
STMicroelectronics N.V.
意法半导
MICROCHIP[Microchip Technology]
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
SGS Thomson Microelectronics
|
| M36P0R9070E0 |
512 Mbit Flash memory 128 Mbit (Burst) PSRAM
|
Numonyx
|
| M36L0R7040B0 M36L0R7040T0 |
128 Mbit Flash Memory and 16 Mbit PSRAM 1.8V Supply Multi-Chip Package
|
STMicroelectronics
|
| S79FL256S |
256 Mbit (32 MB)/512 Mbit (64 MB), 3 V, Dual-Quad SPI Flash
|
Cypress Semiconductor
|
| M58PV001LE96ZB5 M58PR001LE M58PR001LE96ZB5 M58PR25 |
256-Mbit, 512-Mbit or 1-Gbit (× 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
|
STMicroelectronics
|
| M58PR512JE96ZB5E M58PR512JE96ZB5F M58PR256JE96ZB5E |
256 Mbit or 512 Mbit (x16, Multiple Bank, Multilevel, Burst) 1.8 V supply Flash memories
|
STMicroelectronics
|
