| PART |
Description |
Maker |
| MB84SF6H6H6L2-70PBS MB84SF6H6H6L2-70 |
3 Stacked MCP (Multi-Chip Package) FLASH & FLASH & FCRAM 128M (X16) Burst FLASH MEMORY & 128M (X16) Page/Burst Mobile FCRAM
|
SPANSION[SPANSION]
|
| MB81ES173225-15-X MB81ES171625-15-X E511408 MB81ES |
SINGLE DATA RATE I/F FCRAM Consumer/Embedded Application Specific Memory for SiP
From old datasheet system
Consumer FCRAM
|
FUJITSU[Fujitsu Media Devices Limited]
|
| MB82DBS04163C-70LWFKT |
MEMORY Mobile FCRAMTM CMOS 64 M Bit (4 M word×16 bit) Mobile Phone Application Specific Memory
|
Fujitsu Component Limited.
|
| MB81P643287 |
MEMORY CMOS 8 x 256K x 32 BIT, FCRAM CORE BASED DOUBLE DATA RATE SDRAM
|
Fujitsu Microelectronics
|
| MB82DP02183E-65L |
32 Mbit Mobile FCRAM 3.0 V, Page Mode
|
Fujitsu Component Limited.
Fujitsu Media Devices Limited
|
| MB82DBS02154E-70L |
32 Mbit Mobile FCRAM 1.8 V, Burst Mode, Multiplexed Address and Data Bus
|
Fujitsu Component Limited.
Fujitsu Media Devices Limited
|
| MB84VD23381FJ MB84VD23381FJ-80PBS |
Stacked MCP (Multi-Chip Package) FLASH MEMORY & FCRAM
|
Fujitsu Component Limited.
Fujitsu Limited
|
| CAT28F010 CAT28F010TI-70T CAT28F010PI-70T CAT28F01 |
120ns 2M-bit CMOS flash memory
90ns 2M-bit CMOS flash memory
70ns 2M-bit CMOS flash memory
1 Megabit CMOS Flash Memory
High Speed CMOS Logic 8-Stage Shift-and-Store Bus Register with 3-Stage Outputs 16-PDIP -55 to 125
|
http://
CATALYST[Catalyst Semiconductor]
|
| M6MGD967W3 |
100,663,296-BIT (6,291,456-WORD BY 16-BIT) CMOS FLASH MEMORY &33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS Mobile RAM
|
RENESA
|
| HY5S5B6GLF-6 HY5S5B6GLF-6E HY5S5B6GLF-H HY5S5B6GLF |
256Mbit (16Mx16bit) Mobile SDR Memory
|
Hynix Semiconductor
|
