PART |
Description |
Maker |
APT1001RBVFR |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 11A I(D) | TO-247AD 晶体管| MOSFET的| N沟道| 1KV交五(巴西)直| 11A条(丁)|采用TO - 247AD
|
Microsemi, Corp.
|
APT1001RBNR |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 11A I(D) | TO-247AD 晶体管| MOSFET的| N沟道| 1KV交五(巴西)直| 11A条(丁)|采用TO - 247AD
|
Advanced Power Technology, Ltd.
|
R6076ENZ1 |
Nch 600V 76A Power MOSFET
|
Rohm
|
CDBV3-70-G CDBV3-70A-G CDBV3-70C-G CDBV3-70S-G |
Small Signal Schottky Diodes, V-RRM=70V, V-R=70V, I-O=70mA
|
Comchip Technology
|
CDST-56-G CDST-99-G |
Switching Diodes Array, V-RRM=70V, V-R=70V, P-D=225mW, I-F=200mA
|
Comchip Technology
|
CDBK70 |
Small Signal Schottky Diodes, V-RRM=70V, V-R=70V, I-O=70mA
|
Comchip Technology
|
DK48N75 |
70V,68A N-Channel Trench Process Power MOSFET
|
Thinki Semiconductor Co...
|
DK48N18 |
70V,158A N-Channel Trench Process Power MOSFET
|
Thinki Semiconductor Co...
|
IXTQ160N10T IXTH160N10T |
Preliminary Technical Information TrenchMVTM Power MOSFET 160 A, 100 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
IXYS Corporation
|
APT751R2BN |
9 A, 750 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
|
APT5540BN |
18 A, 550 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
|
IXFH40N30S |
40 A, 300 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
IXYS CORP
|
|