| PART |
Description |
Maker |
| PS21963-AET PS21963-CET PS21963-ET PS21963-ETW |
600V/8A low-loss CSTBTTM inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| PS21963-EST |
600V/8A low-loss CSTBTTM inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| PS21963-4E PS21963-4E09 PS21963-4CE PS21963-4EW PS |
Dual-In-Line Package Intelligent Power Module
600V/8A low-loss CSTBTTM inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| ENA1845 |
Planar Ultrafast Rectifier, Low VF type, 20A, 600V, 1.4V, TO-220F-2FS
|
ON Semiconductor
|
| STGW20NB60H 6205 |
N-CHANNEL 20A - 600V TO-247 PowerMESH IGBT
N-CHANNEL 20A - 600V TO-247 PowerMESH TM IGBT
From old datasheet system
N-CHANNEL 20A - 600V TO-247 PowerMESH IGBT
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| IRG4BC40U |
600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A)
|
International Rectifier
|
| PS21962-S |
600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| PS21962-T09 PS21962-AT PS21962-CT PS21962-T PS2196 |
600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| PS21963-ST |
600V/10A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion.
|
Mitsubishi Electric Semiconductor
|
| PS21353-N |
DIP - IPM
600V/10A low-loss 4th generation (planar) IGBT inverter bridge for 3 phase DC-to-AC power conversion.
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| S20WB60 |
Bridge Diode(600V 20A)
|
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
| AOK20N60 |
600V,20A N-Channel MOSFET
|
ShenZhen FreesCale Electronics. Co., Ltd
|
