PART |
Description |
Maker |
GS8170DD18GC-333IT GS8170DD18C-333I GS8170DD18C-25 |
333MHz 1M x 18 18MB double data rate sigmaRAM SRAM 300MHz 1M x 18 18MB double data rate sigmaRAM SRAM 250MHz 1M x 18 18MB double data rate sigmaRAM SRAM 1M X 18 STANDARD SRAM, 1.6 ns, PBGA209
|
GSI TECHNOLOGY
|
EM44BM1684LBB-3F |
512Mb (8M隆驴4Bank隆驴16) Double DATA RATE 2 SDRAM 512Mb (8M×4Bank×16) Double DATA RATE 2 SDRAM
|
Eorex Corporation
|
M13S128324A-2M |
Double-data-rate architecture, two data transfers per clock cycle
|
Elite Semiconductor Mem...
|
M14D2561616A-2E |
Internal pipelined double-data-rate architecture; two data access per clock cycle
|
Elite Semiconductor Mem...
|
K4D263238M K4D263238M-QC45 K4D263238M-QC50 K4D2632 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
W9412G2IB W9412G2IB4 W9412G2IB-6I |
1M × 4 BANKS × 32 BITS GDDR SDRAM Double Data Rate architecture; two data transfers per clock cycle 4M X 32 DDR DRAM, 0.7 ns, PBGA144
|
Winbond WINBOND ELECTRONICS CORP
|
K4D263238F K4D263238F-QC40 K4D263238F-QC50 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 100万x 32Bit的4银行双数据速率同步DRAM的双向数据选通和DLL 128Mbit DDR SDRAM From old datasheet system
|
Samsung Semiconductor Co., Ltd. SAMSUNG[Samsung semiconductor] Samsung Electronics Inc
|
HYB18T512800B2FL-3S HYB18T512400B2F-3.7 |
512-Mbit Double-Data-Rate-Two SDRAM 64M X 8 DDR DRAM, 0.45 ns, PBGA60 512-Mbit Double-Data-Rate-Two SDRAM 128M X 4 DDR DRAM, 0.5 ns, PBGA60
|
Qimonda AG
|
VDD8616A8A VDD8616A8A-75B VDD8608A8A-75BA |
Double Data Rate SDRAM
|
http:// List of Unclassifed Manufacturers ETC
|
VDD7616A4A-75BA VDD7616A4A VDD7616A4A-75B |
DOUBLE DATA RATE SDRAM
|
V-Data List of Unclassifed Manufacturers ETC[ETC] Electronic Theatre Controls, Inc.
|
W942504CH-75 |
DDR SDRAM (Double Data Rate)
|
Winbond Electronics
|
HYB18TC1G160BF-2.5 HYB18TC1G800BF07 HYB18TC1G800BF |
1-Gbit Double-Data-Rate-Two SDRAM
|
Qimonda AG
|