| PART |
Description |
Maker |
| HY51VS18163HG HY51V18163HGT-6 HY51V18163HGJ HY51V1 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power
1M x 16Bit EDO DRAM 100万16 EDO公司的DRAM
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 60 ns, PDSO44
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor, Inc.
|
| IC41C82052 IC41LV82052 IC41LV82052-60T IC41C82052- |
DYNAMIC RAM, FPM DRAM
2M x 8 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
Half-duplex,15-kV ESD, 1/4 UL Transceiver 8-PDIP -40 to 85 200万86兆），充满活力和快速页面模式内
|
ICSI[Integrated Circuit Solution Inc]
Omron Electronics, LLC
|
| IC41C82052S IC41LV82052S IC41C82052S-50J IC41C8205 |
DYNAMIC RAM, FPM DRAM
2M x 8 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
|
ICSI[Integrated Circuit Solution Inc]
|
| IC41C16105S IC41LV16105S IC41C16105S-50K IC41C1610 |
DYNAMIC RAM, FPM DRAM
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
|
ICSI[Integrated Circuit Solution Inc]
|
| HYB514100BJ-50- Q67100-Q759 Q67100-Q971 |
4M × 1-Bit Dynamic RAM(4M × 1位动态RAM)
4M x 1-Bit Dynamic RAM 4M X 1 FAST PAGE DRAM, 50 ns, PDSO20
|
SIEMENS AG
|
| IC41C16100AS IC41C16100A IC41LV16100AS IC41LV16100 |
DYNAMIC RAM, EDO DRAM
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
|
ICSI[Integrated Circuit Solution Inc]
|
| HYB514400BJL-70 HYB514400BJL-60 HYB514400BJL-50 HY |
1 048 576 x 4-Bit Dynamic RAM
4 194 304 x 1-Bit Dynamic RAM
|
Infineon
|
| HYB5117800BSJ-70 HYB5117800BSJ-60 HYB5117800BSJ-50 |
-2M x 8 - Bit Dynamic RAM 2k Refresh
2M x 8-Bit Dynamic RAM
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
