PART |
Description |
Maker |
CJD127 CJD127PNP CJD122 CJD122NPN CJD122-NPN |
SMD Bipolar Power Transistor NPN Darlington COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR 互补性的芯片功率达林顿晶体管 From old datasheet system SMD Bipolar Power Transistor PNP Darlington
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Central Semiconductor, Corp. Central Semiconductor Corp. CENTRAL[Central Semiconductor Corp]
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CXT3150 |
SMD Bipolar Power Transistor NPN High Current
|
Central Semiconductor
|
MJD18002D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network
|
ON Semiconductor
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PHI920-33 PH1920-33 |
Low Power Zero-Drift Operational Amplifier with Internal Capacitors; Package: SO; No of Pins: 8; Temperature Range: 0°C to 70°C Wireless Bipolar Power Transistor, 33W 1930 - 1990 MHz Wireless Bipolar Power Transistor/ 33W 1930 - 1990 MHz
|
Tyco Electronics
|
2N1021A 2N457A 2N1166 2N1022A 2N1552 2N1554 |
germanium power transistors Bipolar Junction Transistor SILICON PNP TRANSISTOR
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New Jersey Semi-Conductor Products, Inc. New Jersey Semiconductors New Jersey Semi-Conductor P... New Jersey Semi-Conduct...
|
PH1516-100 |
Wireless Bipolar Power Transistor, 100W 1450 - 1550 MHz Wireless Bipolar Power Transistor/ 1 OOW 1450 - 1550 MHz
|
Tyco Electronics
|
MMDJ3N03BJ MMDJ3N03BJT |
DUAL BIPOLAR POWER TRANSISTOR NPN SILICON 30 VOLTS 3 AMPERES 3 A, 30 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR, SO-8
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
|
2SD1664 2SD1858 A5800362 2SD1664P 2SD1664T100Q 2SD |
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis Medium Power Transistor (32V/ 1A) Medium Power Transistor (32V, 1A) From old datasheet system Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
Littelfuse Rohm CO.,LTD. ROHM[Rohm]
|
MJE18204-D |
SWITCHMODE NPN Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications POWER TRANSISTORS 5 AMPERES 1200 VOLTS 35 and 75 WATTS
|
ON Semiconductor
|
STE50DE100 |
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1000 V - 50 A - 0.026 W POWER MODULE 混合发射器开关双极晶体管内酰胺酶1000 50 0.026 W电源模块 From old datasheet system HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT" 1000 V - 50 A - 0.026 Ohm POWER MODULE
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STMicroelectronics N.V. ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
GT15M321 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
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TOSHIBA[Toshiba Semiconductor]
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