PART |
Description |
Maker |
MWS5101 MWS5101A MWS5101ADL3 MWS5101AEL2 MWS5101AE |
256-Word x 4-Bit LSI Static RAM(1K大规模集成电路静态RAM) 256字4位LSI的静态RAM(每1000大规模集成电路静态内存) LJT 6C 6#20 SKT WALL RECP Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:11-35 RoHS Compliant: No From old datasheet system
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
CDM6116AC_3 CDM6116AC CDM6116AC/3 |
High-Reliability CMOS 2048-Word by 8-bit LSI Static RAM
|
List of Unclassifed Manufacturers ETC
|
M5M5W817KT-70HI |
Memory>Low Power SRAM 8388608-BIT (524288-WORD BY 16-BIT / 10485776-WORD BY 8-BIT) CMOS STATIC RAM
|
Renesas Electronics Corporation
|
TC55W800FT |
524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
|
Toshiba Corporation
|
TC55V1403J-20 TC55V1403FT-15 TC55V1403FT-20 TC55V1 |
4,194,304 WORD BY 1-BIT/1,048,576 WORD BY 4 BIT CMOS STATIC RAM
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
CXK5B81020J CXK5B81020J-12 CXK5B81020TM CXK5B81020 |
131072-word ′ 8-bit High Speed Bi-CMOS Static RAM 131072-word ? 8-bit High Speed Bi-CMOS Static RAM 131072-word 8-bit High Speed Bi-CMOS Static RAM 131072-word 8-bit High Speed Bi-CMOS Static RAM 131072字?8位高速双CMOS静态RAM 128 x 64 pixel format, LED Backlight available 131072字?8位高速双CMOS静态RAM
|
SONY[Sony Corporation] Sony, Corp.
|
CXK5864BM-10L CXK5864B CXK5864BP-10L CXK5864BP-12L |
Series 400B sealed SMT sub-miniature rocker switch with variety of switching functions 8,192-WORD X 8-BIT HIGH SPEED CMOS STATIC RAM 8192-WORD X 8-BIT HIGH SPEED CMOS STATIC RAM 8,192字8位高速CMOS静态RAM
|
http:// SONY[Sony Corporation]
|
M5M51016BRT-10LL M5M51016BRT-10L D98007 M5M51016BT |
1048576-BIT(65536-WORD BY 16-BIT) CMOS STATIC RAM 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM From old datasheet system 1048576-BIT(65536-16-1048576-BIT(65536-WORD WORDBY BY16-BIT)CMOS STATIC RAM
|
Mitsubishi Electric Corporation
|
R1EX25002ASA00A-15 |
Serial Peripheral Interface 2k EEPROM (256-word × 8-bit) 4k EEPROM (512-word × 8-bit) Electrically Erasable and Programmable Read Only Memory
|
Renesas Electronics Corporation
|
M5M51016BRT-10L-I M5M51016BRT-10LL-I M5M51016BRT-7 |
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM 1048576位(65536字由16位)的CMOS静态RAM From old datasheet system 1048576-1048576-BIT CMOS STATICRAM 1048576-BIT(65536-WORD BY 16-BIT) CMOS STATIC RAM
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
TC55VBM316AFTN TC55VBM316AFTN40 TC55VBM316AFTN55 T |
524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|