| PART |
Description |
Maker |
| DC818A DC818A-15 |
SCH LTC2924CGN FOUR POWER RAILS POWER SUPPLY SEQUENCER
|
Linear Technology
|
| ADLS15HD ADLS15HD-16N ADLS15HD-11N |
Intel Atom Z5xx 1.1GHz - 1.6GHz, US15W SCH
|
Advanced Digital Logic, Inc.
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| BFN37 BFN39 Q62702-F1305 Q62702-F1304 |
From old datasheet system
PNP Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BFN20 Q62702-F1058 |
NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| APT5014BLL APT5014SLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS 电源MOS 7TM是一个低损耗，高电压，N沟道增强模式的新一代功率MOSFET
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS 7 500V 35A 0.140 Ohm
|
Advanced Power Technology, Ltd.
|
| M100K |
High Voltage Power Rectifiers / High Voltage Rectifier Diodes
|
Facon Semiconductor
|
| BUL76A |
POWERLINE: RP20-S_DEW - 4:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 84%
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
TT electronics Semelab Limited
Seme LAB
|
| APT33GF120B2RD APT33GF120LRD |
Fast IGBT & FRED 1200V 52A
The Fast IGBT is a new generation of high voltage power IGBTs.
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
The Fast IGBTis a new generation of high voltage power IGBTs.
|
Advanced Power Technology Ltd.
|
| APT30GT60BR |
The Thunderbolt IGBTis a new generation of high voltage power IGBTs.
Thunderbolt IGBT 600V 58A
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs.
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| ADM6710AARJZ-REEL7 ADM6710HARJZ-REEL7 ADM6710CARJZ |
Low Voltage, High Accuracy, Quad Voltage UP Supervisory Circuit 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO6
Low Voltage, High Accuracy, Quad Voltage UP Supervisory Circuit 低电压，高精度，四路电压监控电路
|
Analog Devices, Inc.
Infineon Technologies AG
|
