PART |
Description |
Maker |
CMOSH-4E10 |
ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODE
|
Central Semiconductor Corp
|
CMUD6263E10 CMUD6263SE CMUD6263CE CMUD6263AE |
ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES
|
Central Semiconductor Corp
|
CXT5551E |
ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
CXT5401E |
ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
CZT5401E10 |
ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR
|
Central Semiconductor Corp
|
CMUT5087E CMUT5088E CMUT5087E10 |
ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS
|
Central Semiconductor Corp
|
CZT7090LE |
ENHANCED SPECIFICATION SURFACE MOUNT LOW VCE(SAT) PNP SILICON POWER TRANSISTOR
|
Central Semiconductor Corp
|
CMOSH-4E |
SURFACE MOUNT ENHANCED SPECIFICATION SILICON SCHOTTKY DIODE SMD Schottky Diode Single: High Current
|
Central Semiconductor Corp.
|
CMBT3904E10 CMBT3906E CMBT3904E-15 |
ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS COMPLEMENTARY FEMTOminiTM SILICON TRANSISTORS
|
Central Semiconductor Corp Central Semiconductor C...
|
SP0208LE5 |
Amplified “Zero Height SiSonic Microphone with Enhanced RF Specification
|
Knowles Electronics
|
749010013 744761068A |
All 16 terminals must lie on a plane within 004 of surface A after lead tinning specification for release specification for release
|
Wurth Elektronik GmbH & Co. KG, Germany. Wurth Elektronik GmbH &...
|