PART |
Description |
Maker |
ACT-SF512K32N-26P5C ACT-SF512K32N-26P5M ACT-SF512K |
ACT-SF512K32 High Speed 512Kx32 SRAM / 512Kx32 Flash Multichip Module
|
Aeroflex Circuit Technology
|
WS512K32-85G2TI WS512K32-100G2TI WS512K32-85G2TC W |
512Kx32 SRAM MODULE, SMD 5962-94611
|
WEDC[White Electronic Designs Corporation]
|
PUMA2S16000M-025 PUMA77S16000M-020 PUMA2S16000I-02 |
15NS, 68 PLCC, IND TEMP(EPLD) SRAM|512KX32|CMOS|PGA|66PIN|CERAMIC 15NS, 68 PLCC, COM TEMP(EPLD) SRAM|512KX32|CMOS|QFP|68PIN|CERAMIC 20NS, 44 PLCC, IND TEMP(EPLD) 30MHZ, 20 PLCC, IND TEMP, GREEN(FPGA) 15NS, TQFP, COM TEMP, ROHS-A(EPLD) 20NS, 44 TQFP, COM TEMP(EPLD) 7NS, 44 TQFP, COM TEMP, GREEN(EPLD) 30MHZ, 3.3V, 20 PLCC, IND TEMP(FPGA) 静态存储器| 512KX32 |的CMOS |美巡赛| 66PIN |陶瓷
|
Intel, Corp.
|
EDI7F433512C80BNC EDI7F433512C100BNC EDI7F433512C1 |
512Kx32 Flash
|
White Electronic Designs Corporation
|
CY7C1380C-200AC CY7C1380C-200BGC CY7C1380C-167AC C |
Memory : Sync SRAMs PUSHBUTTON, METAL, FLAT, 22MM 5A; Switch function type:NC/NO Mom; Voltage, contact AC max:250V; Temp, op. max:55(degree C); Temp, op. min:-20(degree C); Diameter, panel cut-out:22.2mm; Length / Height, external:32mm; Dielectric RoHS Compliant: Yes 18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165 18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PBGA165 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PQFP100 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PQFP100 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3.4 ns, PQFP100
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
AS7C256 AS7C256-10 AS7C256-10JC AS7C256-10PC AS7C2 |
ECONOLINE: RSZ/P - 1kVDC & 2kVDC Isolation- UL94V-0 Package Material- No Heatsink Required- No Extern. Components Required- Toroidal Magnetics- ContinuousShort Circuit Protection ( /P-Suffix) High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 35 ns, PDSO28 High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 10 ns, PDSO28 High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 25 ns, PDSO28 High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 12 ns, PDSO28 High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 12 ns, PDIP28 High Performance 32Kx8 CMOS SRAM 高性能32Kx8 CMOS SRAM High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 10 ns, PDIP28 High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 25 ns, PDIP28
|
ETC[ETC] ALSC[Alliance Semiconductor Corporation] Alliance Semiconductor, Corp. Alliance Semiconductor ...
|
HM66AEB18205 HM66AEB18205BP-33 HM66AEB18205BP-30 H |
Memory>Fast SRAM>QDR SRAM 36-Mbit DDR II SRAM Separate I/O 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
R1RP0416DSB-2PR R1RP0416D R1RP0416DGE-2LR R1RP0416 |
Memory>Fast SRAM>Asynchronous SRAM 4M High Speed SRAM (256-kword X 16-bit) From old datasheet system
|
http:// RENESAS[Renesas Electronics Corporation] Renesas Electronics Corporation.
|
R1RW0404DGE-2PR R1RW0404D R1RW0404DGE-2LR REJ03C01 |
Memory>Fast SRAM>Asynchronous SRAM 4M HIGH SPEED SRAM (1-MWORD X 4-BIT)
|
RENESAS[Renesas Electronics Corporation]
|