| PART |
Description |
Maker |
| 2SD2537 2SD2171S 2SD2226K 2SD2227S 2SD2351 |
MEDIUM POWER TRANSISTOR(25V, 1.2V), GENERAL PURPOSE TRANSISTOR(50V, 0.15A) 中功率晶体管25V的，1.2伏），通用晶体管（50V.15A
|
Rohm Co., Ltd.
Rohm CO.,LTD.
ROHM[Rohm]
|
| CMBA847G CMBA847E CMBA847F |
0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 400 - 800 hFE.
0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 250 - 500 hFE.
0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 150 - 300 hFE.
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SOT-23
|
Continental Device India Limited
|
| 2SB1202 2SD1802 2SD1802T 2SD1802U 2SB1202T |
High-Current Switching Applications
TRANSISTOR,BJT,NPN,50V V(BR)CEO,3A I(C),TO-252
TRANSISTOR,BJT,PNP,50V V(BR)CEO,3A I(C),TO-252
From old datasheet system
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 3A I(C) | TO-252
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
|
SANYO[Sanyo Semicon Device]
Sanyo Semiconductor Corp
|
| 2SC4211-6 2SC4211-7 2SC4211-5 2SD1913S 2SC4640S 2S |
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-23VAR
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SPAK
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | SOT-23VAR 晶体管|晶体管|进步党| 50V五（巴西）总裁| 150毫安一（c）|的SOT - 23VAR
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | TO-92 晶体管|晶体管|进步党| 50V五（巴西）总裁| 150毫安一（c）|92
|
Rohm Co., Ltd.
|
| 2SC3393 2SA1339 2SC3393R 2SC3393S 2SA1339T 2SC3393 |
High-Speed Switching Applications
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 500MA I(C) | SPAK
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 500MA I(C) | SPAK
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| CFA1012 CFA1012O CFC2562O CFA1012Y CFC2562Y |
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 240 hFE. Complementary CFA1012Y
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFA1012O
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFC2562O
PNP SILICON PLANAR POWER TRANSISTOR 进步党硅平面功率晶体
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 120 - 240 hFE. Complementary CFC2562Y
|
Continental Device India, Ltd.
CDIL[Continental Device India Limited]
Continental Device Indi...
|
| PBSS4350T PBSS4350T_1 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 2A I(C) | SOT-23 晶体| BJT | NPN | 50V V(BR)CEO | 2A I(C) | SOT-23
From old datasheet system
50 V low VCEsat NPN transistor
|
Global Mixed-mode Technology, Inc.
Philips
|
| DTA123YCAHZG DTA123YCAHZGT116 |
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)
|
ROHM
|
| DTC113ZCAHZGT116 |
NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor)
|
ROHM
|
| DTC113ZCAT116 |
NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor)
|
ROHM
|
| DTA124XCA DTA124XCAT116 |
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)
|
ROHM
|
| DTA114YCAT116 |
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)
|
ROHM
|
