| PART |
Description |
Maker |
| WP-MKT4-173250-S WP-MKT4 WP-MKT4-173225-D WP-MKT4- |
MOSFET DUAL N-CHAN 20V SOT-323 窄带调频甚高频发射模
MOSFET N-CHAN DUAL 200MW SOT-363
MOSFET N-CHAN 50V 350MW SOT-23
MOSFET DUAL N-CHAN 50V SOT-26
FM Narrow Band VHF Transmitter Module
|
Electronic Theatre Controls, Inc.
Wireless Products
ETC[ETC]
List of Unclassifed Manufacturers
|
| NE25139U74 NE25139U73 NE25139U72 NE25139U71 NE2513 |
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,30MA I(DSS),SOT-143
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,20MA I(DSS),SOT-143
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,10MA I(DSS),SOT-143
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,5MA I(DSS),SOT-143
From old datasheet system
|
NEC Electron Devices
|
| TSM2N7002EDCU6 TSM2N7002ED |
50V Dual N-Channel Enhancement Mode MOSFET
|
TSC[Taiwan Semiconductor Company, Ltd]
|
| IRF7103I |
50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
| IRF7103QPBF IRF7103QTRPBF |
50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package - Q101 Qualified
|
International Rectifier
|
| IRL7Y1905C |
50V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
HEXFET POWER MOSFET THRU-HOLE (TO-257AA) 50V, N-CHANNEL
|
IRF[International Rectifier]
|
| GP1A38L7 GP1A38L5 |
MOSFET N-CH 60V 200MW SOT-323 多通道光电断路器海外私人投资公司与连接
ARRAY NPN TRANS/SW DIODE SOT363
Multi-channel OPIC Photointerrupter with Connector
|
Sharp, Corp.
Sharp Corporation
SHARP[Sharp Electrionic Components]
|
| BUZ71 2950 BUZ71A |
N - CHANNEL 50V - 0.1W - 13A TO-220 STripFET] POWER MOSFET
N - CHANNEL 50V - 0.085W - 17A TO-220 STripFET] POWER MOSFET
From old datasheet system
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| VRF148A VRF148AMP VRF148A10 |
RF MOSFET (VDMOS) for 50V operation; P(out) (W): 30; P(in) (W): 1; Gain (dB): 15; VDD (V): 50; Coss (pF): 35; Case Style: M113 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF POWER VERTICAL MOSFET
|
Microsemi, Corp.
Microsemi Corporation
|
| FF300R12KF2 |
TRANSISTOR | IGBT | N-CHAN | DUAL | 1.2KV V(BR)CES | 300A I(C) | M:HL093HW060 晶体管| IGBT的|正陈|双| 1.2KV五（巴西）国际消费电子展| 300一（c）|米：HL093HW060
|
Infineon Technologies AG
|
