| PART |
Description |
Maker |
| M5LV-320_192-10AI M5LV-512_104-6AC M5-192_74-15YC |
IND SHLD 3.3UH 9A RMS SMT
Fifth Generation MACH Architecture EE PLD, 7.5 ns, PQFP160
Fifth Generation MACH Architecture EE PLD, 12 ns, PBGA256
Fifth Generation MACH Architecture EE PLD, 12 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 20 ns, PQFP240
Fifth Generation MACH Architecture EE PLD, 12 ns, PQFP144
Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP208
10-Bit Broadband Modem Mixed Signal Front End (MxFE®); Package: LFCSP (9x9mm, 7.10 exposed pad); No of Pins: 64; Temperature Range: Industrial EE PLD, 12 ns, PQFP144
12-Bit Broadband Modem Mixed Signal Front End (MxFE®); Package: LFCSP (9x9mm, 7.10 exposed pad); No of Pins: 64; Temperature Range: Commercial EE PLD, 15 ns, PQFP144
12-Bit Broadband Modem Mixed Signal Front End (MxFE®); Package: LFCSP (9x9mm, 7.10 exposed pad); No of Pins: 64; Temperature Range: Industrial EE PLD, 15 ns, PQFP144
Fifth Generation MACH Architecture EE PLD, 6.5 ns, PQFP240
CONNECTOR ACCESSORY EE PLD, 10 ns, PQFP100
Fifth Generation MACH Architecture EE PLD, 7.5 ns, PBGA352
Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP100
Fifth Generation MACH Architecture EE PLD, 20 ns, PBGA352
Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP160
Fifth Generation MACH Architecture EE PLD, 10 ns, PBGA352
Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP160
Fifth Generation MACH Architecture EE PLD, 12 ns, PQFP160
Fifth Generation MACH Architecture EE PLD, 12 ns, PQFP240
Fifth Generation MACH Architecture EE PLD, 10 ns, PBGA256
Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP240
Fifth Generation MACH Architecture EE PLD, 6.5 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 20 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP208
CONNECTOR ACCESSORY EE PLD, 12 ns, PQFP100
Fifth Generation MACH Architecture EE PLD, 5.5 ns, PQFP100
Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP240
Fifth Generation MACH Architecture
|
Lattice Semiconductor, Corp.
Lattice Semiconductor Corporation
|
| TC514400JL TC51440JL-10 TC51440JL-80 TC51440ZL-10 |
80 ns, 4-bit generation dynamic RAM
1,048,576 x 4 BIT DYNAMIC RAM 1,048,576 × 4位动态随机存储器
100 ns, 4-bit generation dynamic RAM
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| MC68EC030TS |
MC68EC030TS Second-Generation 32-Bit Enhanced Embedded Controller
|
Motorola
|
| MC68040V |
Third-Generation 32-Bit Low-Power Microprocessor
From old datasheet system
|
Motorola
|
| CS5165 CS5165GDW16 CS5165GDWR16 |
1.5 A SWITCHING CONTROLLER, PDSO16
Fast/ Precise 5-Bit Synchronous Buck Controller for the Next Generation Low Voltage Pentium II Processors
Fast, Precise 5-Bit Synchronous Buck Controller for the Next Generation Low Voltage Pentium II Processors
|
CHERRY[Cherry Semiconductor Corporation]
ZF Electronics Corporation
|
| USBMOD4 |
USB Plug and Play Parallel 8-Bit FIFO Development Module (Second Generation)
|
List of Unclassifed Manufacturers
ETC
|
| SY100S834 SY100S834L SY100S834Z SY100S834ZC SY100S |
RELAY, DPDT, 1A, 5VDC
(±1, ±2, ±4) OR (±2, ±4, ±8) CLOCK GENERATION CHIP
(1 2 4) OR (2 4 8) CLOCK GENERATION CHIP
(÷1, ÷2, ÷4) OR (÷2, ÷4, ÷8) CLOCK GENERATION CHIP
|
Micrel Semiconductor,Inc.
MICREL[Micrel Semiconductor]
|
| APT100GF60JRD |
The Fast IGBTis a new generation of high voltage power IGBTs. ⑩的快速IGBT是一种高压IGBT的新一代
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
The Fast IGBT is a new generation of high voltage power IGBTs.
Fast IGBT & FRED 600V 140A
|
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
|
| APT30GT60BR |
The Thunderbolt IGBTis a new generation of high voltage power IGBTs.
Thunderbolt IGBT 600V 58A
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs.
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| CR05AS-8-ET24 CR05AS-8 CR05AS-8-ET14 |
8-bit microcontroller with accelerated two-clock 80C51 core, 4 kB/8 kB/16 kB 3 V byte-erasable flash with 8-bit ADCs, SOT361-1 (TSSOP28), Reel Dry Pack, SMD, 13"
Thyristor Low Power Use
8-bit microcontroller with accelerated two-clock 80C51 core 8 kB 3 V byte-erasable flash with 512-byte data EEPROM, SOT117-1 (DIP28), Tube
8-bit microcontroller with accelerated two-clock 80C51 core, 4 kB/8 kB/16 kB 3 V byte-erasable flash with 8-bit ADCs, SOT361-1 (TSSOP28), Reel Dry Pack, SMD, 13"
Smartcard RTC; ultra low power oscillator with integrated counter for initiating one time password generation, Uncased die, Circuit Element Packed On Reel 7"
Smartcard RTC; ultra low power oscillator with integrated counter for initiating one time password generation, Uncased die, Circuit Element Packed On Reel 7"
|
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
| GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation
High Power Switching Applications The 4th Generation 高功率转换应用的第四
|
Toshiba, Corp.
|
|
