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    2SA2037 2SC5694

SANYO[Sanyo Semicon Device]
Part No. 2SA2037 2SC5694
OCR Text ...-Base Breakdown Voltage Turn-On time Storage time Fall time Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=(--)40V, IE=0 VEB=(--)4V, IC=0 VCE=(--)2V, IC=(-)1A VCE=(--)10V, IC=(--)500mA VC...
Description DC / DC Converter Applications

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    2SA2039 2SC5706 2SC5706TP-FA 2SA2039TP-FA

SANYO[Sanyo Semicon Device]
SANYO SEMICONDUCTOR CO LTD
Sanyo Electric Co.,Ltd.
Part No. 2SA2039 2SC5706 2SC5706TP-FA 2SA2039TP-FA
OCR Text ...-Base Breakdown Voltage Turn-On time Storage time Fall time Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=(--)40V, IE=0 VEB=(--)4V, IC=0 VCE=(--)2V, IC=(-)500mA VCE=(--)10V, IC=...
Description Low-Power, Single/Dual-Voltage &#181;P Reset Circuits with Capacitor-Adjustable Reset timeout Delay
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | TO-251VAR
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 5A I(C) | TO-252VAR
Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset timeout Delay
PNP/NPN Epitaxial Planar Silicon Transistors
NPN Epitaxial Planar Silicon Transistors High Current Switching Applications
PNP Epitaxial Planar Silicon Transistors High Current Switching Applications
5000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR

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    2SA2040 2SC5707 C5707 2SA2040TP 2SA2040TP-FA 2SC5707TP-FA 2SC5707FA

SANYO[Sanyo Semicon Device]
Matsshita / Panasonic
Part No. 2SA2040 2SC5707 C5707 2SA2040TP 2SA2040TP-FA 2SC5707TP-FA 2SC5707FA
OCR Text ...-Base Breakdown Voltage Turn-On time Storage time Fall time Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=(--)40V, IE=0 VEB=(--)4V, IC=0 VCE=(--)2V, IC=(-)500mA VCE=(--)10V, IC=...
Description PNP Epitaxial Planar Silicon Transistors High Current Switching Applications
PNP / NPN Epitaxial Planar Silicon Transistors
PNP/NPN Epitaxial Planar Silicon Transistors
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 8A I(C) | TO-251VAR
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 8A I(C) | TO-252VAR
Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset timeout Delay

File Size 37.77K  /  5 Page

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    2SA2043 2SC5709 2SA2043TP-FA 2SC5709TP-FA

Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SA2043 2SC5709 2SA2043TP-FA 2SC5709TP-FA
OCR Text ...-Base Breakdown Voltage Turn-On time Storage time Fall time Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=(--)12V, IE=0 VEB=(--)4V, IC=0 VCE=(--)2V, IC=(-)500mA VCE=(--)2V, IC=(-)500mA V...
Description CABLE ASSEMBLY; UHF MALE TO UHF MALE; 50 OHM, RG58C/U COAX 直流/直流转换器应
NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 10A I(C) | TO-252VAR
TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 10A I(C) | TO-251VAR

File Size 37.35K  /  5 Page

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    2SA2044 2SC5710 2SA2044FA 2SC5710TP-FA

SANYO[Sanyo Semicon Device]
Matsshita / Panasonic
Part No. 2SA2044 2SC5710 2SA2044FA 2SC5710TP-FA
OCR Text ...-Base Breakdown Voltage Turn-On time Storage time Fall time Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=(--)30V, IE=0 VEB=(--)4V, IC=0 VCE=(--)2V, IC=(-)500mA VCE=(--)10V, IC=(--)500mA...
Description Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset timeout Delay
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 9A I(C) | TO-252VAR
DC / DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
PNP / NPN Epitaxial Planar Silicon Transistors
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications

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    2SA2048

Rohm CO.,LTD.
ROHM[Rohm]
Part No. 2SA2048
OCR Text ...Ton - 30 - ns IC= -1.0A Turn-on time IB1= -0.1A Tstg - 100 - ns IB2=0.1A Storage time Tf - 20 - ns VCC -25V Fall time !hFE RANK Q 120-270 R 180-390 !Electrical characteristic curves -10 1000 COLLECTOR CURRENT : IC (A) -1 D...
Description Medium power transistor (−30V, −1.0A)
Medium power transistor (-30V, -1.0A)

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    2SA2049

ROHM[Rohm]
Part No. 2SA2049
OCR Text ...ctor output capacitance Turn-on time Storage time Fall time Symbol Min. Typ. Max. Unit Conditions BVCBO -30 - - V IC= -100A BVCEO -30 - - V IC= -1mA BVEBO -6 - - V IE= -100A - - -1.0 A VCB= -20V ICBO IEBO - - -1.0 A VEB= -4V VCE (sat) - -25...
Description MEDIUM POWER TRANSISTOR

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    2SA2056

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2056
OCR Text ...llector output capacitance Rise time Switching time Storage time Fall time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) Cob tr tstg tf Test Condition VCB = -50 V, IE = 0 VEB = -7 V, IC = 0 IC = -10 mA, IB = 0 VCE = -2 V, ...
Description TOSHIBA Transistor Silicon PNP Epitaxial Type

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    2SA2057

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2057
OCR Text ... speed switching (tstg: storage time/tf: fall time is short) * Low collector-emitter saturation voltage VCE(sat) * Superior forward current transfer ratio hFE linearity * TO-220D built-in: Excellent package with withstand voltage 5 kV guara...
Description Silicon PNP epitaxial planar type

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    2SA2058

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2058
OCR Text ...llector output capacitance Rise time Switching time Storage time Fall time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) Cob tr tstg tf Test Condition VCB = -20 V, IE = 0 VEB = -7 V, IC = 0 IC = -10 mA, IB = 0 VCE = -2 V, ...
Description TOSHIBA Transistor Silicon PNP Epitaxial Type

File Size 194.32K  /  5 Page

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