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				CATALYST[Catalyst Semiconductor] TE Connectivity, Ltd.
Part No.	CAT93HC46 CAT93HC46J-1.8TE13 CAT93HC46JA-1.8TE13 CAT93HC46JATE13 CAT93HC46JE-1.8TE13 CAT93HC46JETE13 CAT93HC46JI-1.8TE13 CAT93HC46JITE13 CAT93HC46JTE13 CAT93HC46P-1.8TE13 CAT93HC46PA-1.8TE13 CAT93HC46PATE13 CAT93HC46PE-1.8TE13 CAT93HC46PETE13 CAT93HC46PI-1.8TE13 CAT93HC46PITE13 CAT93HC46PTE13 CAT93HC46S-1.8TE13 CAT93HC46SA-1.8TE13 CAT93HC46SATE13 CAT93HC46SE-1.8TE13 CAT93HC46SETE13 CAT93HC46SI-1.8TE13 CAT93HC46SITE13 CAT93HC46STE13 CAT93HC46U-1.8TE13 CAT93HC46UA-1.8TE13 CAT93HC46UATE13 CAT93HC46UE-1.8TE13 CAT93HC46UETE13 CAT93HC46UI-1.8TE13 CAT93HC46UITE13 CAT93HC46UTE13
OCR Text	...e x8 or x16 word organization s sequential Read s Software write protection s Power-up inadvertent write protection s Low power CMOS technology s 1,000,000 program/erase cycles s 100 year data retention H GEN FR ALO EE LE A D...
Description	1-kb, 4 MHz @ 4.5 V, 2 MHz @ 2.5 V, 1 MHz @ 1.8 V Static Protection Mat; External Width:3"; Roll Length:24ft; Color:Blue RoHS Compliant: NA 1 - KB的高速微型导线串EEPROM Static Protection Mat; External Width:3"; Roll Length:24ft; Color:Gray RoHS Compliant: NA 1 - KB的高速微型导线串行EEPROM 1-kb High Speed Microwire Serial EEPROM 1 - KB的高速微型导线串行EEPROM
File Size	60.51K / 9 Page	View it Online	Download Datasheet

				Fujitsu Microelectronics FUJITSU[Fujitsu Media Devices Limited]
Part No.	MBM30LV0128-PFTR MBM30LV0128 MBM30LV0128-PFTN
OCR Text	...t enables the spare area during sequential data input, page program, and Read 1. Ready Busy Output : The R/B output signal is used to indicate the operating status of the device. During program, erase, or read, R/B is low and will return hi...
Description	FLASH MEMORY 128 M (16 M x 8) BIT NAND-type
File Size	260.22K / 41 Page	View it Online	Download Datasheet

				ETRON[Etron Technology, Inc.] ETRON[Etron Technology Inc.]
Part No.	EM658160 EM658160TS-33 EM658160TS-35 EM658160TS-4 EM658160TS-5 EM658160TS-6 EM658160TS-7 EM658160TS-8
OCR Text	...t length: 2, 4, 8 - Burst Type: sequential & Interleaved * Individual byte write mask control * DM Write Latency = 0 * Auto Refresh and Self Refresh * 4096 refresh cycles / 64ms * Precharge & active power down * Power supplies: VDD = 3.3V ...
Description	4M x 16 DDR Synchronous DRAM (SDRAM)
File Size	154.94K / 26 Page	View it Online	Download Datasheet

				MICROCHIP[Microchip Technology]
Part No.	MCP23S17T-E_SS MCP23017 MCP23017-E_ML MCP23017-E_SO MCP23017-E_SP MCP23017-E_SS MCP23017T-E_ML MCP23017T-E_SO MCP23017T-E_SP MCP23017T-E_SS MCP23S17 MCP23S17-E_ML MCP23S17-E_SO MCP23S17-E_SP MCP23S17-E_SS MCP23S17T-E_ML MCP23S17T-E_SO MCP23S17T-E_SP
OCR Text	...per operation. BYTE MODE AND sequential MODE The MCP23X17 family has the ability to operate in Byte mode or sequential mode (IOCON.SEQOP). Byte Mode disables automatic Address Pointer incrementing. When operating in Byte mode, the MCP...
Description	16-Bit I/O Expander with Serial Interface
File Size	643.44K / 48 Page	View it Online	Download Datasheet

				NANOAMP[NanoAmp Solutions, Inc.]
Part No.	N16D1618LPAZ2-75I N16D1618LPA N16D1618LPAC2-10I N16D1618LPAC2-60I N16D1618LPAC2-75I N16D1618LPAT2-10I N16D1618LPAT2-60I N16D1618LPAT2-75I N16D1618LPAZ2-10I
OCR Text	.... - 1, 2, 4, 8 or Full Page for sequential Burst. - 4 or 8 for Interleave Burst. * Programmable CAS Latency : 2,3 clocks. * Programmable Driver Strength Control. - Full Strength or 1/2, 1/4 of Full Strength * Deep Power Down Mode * All inpu...
Description	512K 】 16 Bits 】 2 Banks Low Power Synchronous DRAM
File Size	424.17K / 27 Page	View it Online	Download Datasheet

				NANOAMP[NanoAmp Solutions, Inc.]
Part No.	N16D1633LPAZ2-75I N16D1633LPA N16D1633LPAC2-10I N16D1633LPAC2-60I N16D1633LPAC2-75I N16D1633LPAT2-10I N16D1633LPAT2-60I N16D1633LPAT2-75I N16D1633LPAZ2-10I
OCR Text	.... - 1, 2, 4, 8 or Full Page for sequential Burst. - 4 or 8 for Interleave Burst. * Programmable CAS Latency : 2,3 clocks. * Programmable Driver Strength Control. - Full Strength or 1/2, 1/4 of Full Strength * Deep Power Down Mode * All inpu...
Description	512K 】 16 Bits 】 2 Banks Low Power Synchronous DRAM
File Size	424.13K / 27 Page	View it Online	Download Datasheet

				NANOAMP[NanoAmp Solutions, Inc.]
Part No.	NT5DS4M32EG-6 NT5DS4M32EG NT5DS4M32EG-5 NT5DS4M32EG-5G
OCR Text	..., 8 and Full page) -Burst type (sequential & interleave) * Full page burst length for sequential burst type only * Start address of the full page burst should be even * All inputs except data & DM are sampled at the rising edge of the syst...
Description	1M 】 32 Bits 】 4 Banks Double Data Rate Synchronous RAM With Bi-Directional Data Strobe and DLL
File Size	781.03K / 46 Page	View it Online	Download Datasheet

				ISSI
Part No.	IS24C016
OCR Text	...otection -- Write Protect Pin * sequential Read Feature * Filtered Inputs for Noise Suppression * 8-pin PDIP and 8-pin SOIC packages ISSI (R) MARCH 2000 * Self time write cycle with auto clear -- 5 ms @ 2.5V * Organization: -- I...
Description	2 Wire Serial CMOS EEPROM
File Size	76.73K / 11 Page	View it Online	Download Datasheet

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