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				Sanyo Electric Co.,Ltd.
Part No.	LC863316
OCR Text	...line number can be set for each row independently (rows can be overlapped) - horizontal display start position can be set for each row independently - horizontal pitch (bit 9 - 16) *1 and vertical pitch (bit-32) can be set for each row i...
Description	8-Bit Single Chip Microcontroller
File Size	654.14K / 20 Page	View it Online	Download Datasheet

				HYNIX SEMICONDUCTOR INC
Part No.	HY5DU561622ELTP-JI
OCR Text	...1622e(l)tp-xi pin configuration row and column address table items 32mx8 16mx16 organization 8m x 8 x 4banks 4m x 16 x 4banks row address a0 - a12 a0 - a12 column address a0-a9 a0-a8 bank address ba0, ba1 ba0, ba1 auto precharge flag a10 a1...
Description	16M X 16 DDR DRAM, 0.7 ns, PDSO66
File Size	235.26K / 29 Page	View it Online	Download Datasheet


Part No.	HY5118164CSLTC-80 HY5118164CTC-70 HY5118164CSLJC-70 HY5118164CSLJC-60 HY5116164CTC-70 HY5116164CSLJC-70
OCR Text	... gate memory array 4,194,304x16 row decoder ras clock generator substrate bias generator v cc v ss address buffer ras dq0 ~ dq15 ( a10) and (a11) for 4k refresh part (1 k refresh / 4k refresh)* (10/8)* (10/12)* 8 8 8 8 8 8 8 8 a0 a1 ...
Description	x16 EDO Page Mode DRAM
File Size	111.41K / 8 Page	View it Online	Download Datasheet

				ETC[ETC]
Part No.	ICM107 ICM-107BPA ICM107B
OCR Text	...t the beginning of the cycle, a row of pixels is pre-charged to its maximum value. Then the row is exposed to light for several lines worth of time and sampled by the ADC. A "Correlated Double Sampling (CDS)" process is performed with subtr...
Description	ICM107B Mega pixel Color CMOS image sensor
File Size	514.81K / 20 Page	View it Online	Download Datasheet

				VANGUARD INTERNATIONAL SEMICONDUCTOR CORP
Part No.	VG26V17400DJ-5
OCR Text	...ction a0 - a10 address inputs - row address a0 - a10 - column address a0 - a10 - refresh address a0 - a10 dq1 ~ dq4 data - in/data - out ras row address strobe cas column address strobe we write enable oe ...
Description	4M X 4 FAST PAGE DRAM, 50 ns, PDSO24
File Size	254.84K / 25 Page	View it Online	Download Datasheet

				PROMOS TECHNOLOGIES INC
Part No.	V58C2512164SBI5 V58C2512804SBJ5 V58C2512804SBLE5
OCR Text	...clock enable cs chip select ras row address strobe cas column address strobe we write enable dqs (udqs, ldqs) data strobe (bidirectional) a 0 ?a 12 address inputs ba 0 , ba 1 bank select dq?s data input/output dm (udm, ldm) data mask v dd p...
Description	32M X 16 DDR DRAM, 0.7 ns, PDSO66 64M X 8 DDR DRAM, 0.7 ns, PBGA60 64M X 8 DDR DRAM, 0.7 ns, PDSO66
File Size	923.94K / 61 Page	View it Online	Download Datasheet

				NANYA TECHNOLOGY CORP
Part No.	NT5DS16M16BS-6KL
OCR Text	...are used to select the bank and row to be accessed. the address bits registered coincident with the read or write command are used to select the bank and the starting column locati on for the burst access. the ddr sdram provides for prog...
Description	16M X 16 DDR DRAM, 0.7 ns, PDSO66
File Size	2,290.92K / 80 Page	View it Online	Download Datasheet


Part No.	MR18R1624DF0-CM9 MR16R1628DF0-CN9 MR16R1624DF0-CM8 MR16R1624DF0-CM9 MR18R1628DF0-CM8
OCR Text	...nd data buses with independent row and column control yield over 95% bus efficiency. the rdram's 32-bank architecture supports up to four simultaneous transactions per device. features h igh speed up to 1066 mhz rdram storage 184...
Description	64M X 18 RAMBUS MODULE, DMA184 128M X 16 RAMBUS MODULE, DMA184 64M X 16 RAMBUS MODULE, DMA184 128M X 18 RAMBUS MODULE, DMA184
File Size	232.10K / 16 Page	View it Online	Download Datasheet

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