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  rf microwave Datasheet PDF File

For rf microwave Found Datasheets File :: 8473    Search Time::1.797ms    
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    BAT14 BAT14-013 BAT14-033 BAT14-043 BAT14-063 BAT14-073 BAT14-093 BAT14-103 BAT14-113 BAT14-123 Q62702D1346 Q62702D1345

Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Part No. BAT14 BAT14-013 BAT14-033 BAT14-043 BAT14-063 BAT14-073 BAT14-093 BAT14-103 BAT14-113 BAT14-123 Q62702D1346 Q62702D1345 BAT14-124 BAT14-014 BAT14-034 BAT14-044 BAT14-064 BAT14-074 BAT14-094 BAT14-104 BAT14-114
OCR Text ...4 BAT14-123, -124 2) VF2 rf F R F = ------------------------ W 3 DV 40 10 Semiconductor Group 3 Draft A03 1998-04-...microwave Semiconductors the ordering code specifies device family and quality level only. Ordering ...
Description From old datasheet system
HiRel Silicon Schottky Diode (HiRel Discrete and microwave Semiconductor Medium barrier diodes for detector and mixer applications) 伊雷尔硅肖特基二极管(伊雷尔分立半导体和微波探测器和培养基的应用垒二极管混频器)

File Size 77.51K  /  7 Page

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    BFY420 BFY420ES BFY420H BFY420P BFY420S

INFINEON[Infineon Technologies AG]
Part No. BFY420 BFY420ES BFY420H BFY420P BFY420S
OCR Text rf Transistor * * * * * * * HiRel Discrete and microwave Semiconductor For High Gain Low Noise Amplifiers For Oscillators up to 10 GHz Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21dB at 1.8 GHz Hermetically sealed microwave packa...
Description Publications, Books 伊雷尔NPN硅射频晶体管
HiRel NPN Silicon rf Transistor

File Size 395.47K  /  5 Page

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    HMC273MS10G

HITTITE[Hittite Microwave Corporation]
Part No. HMC273MS10G
OCR Text ...cteristics tRISE, tFALL (10/90% rf) tON, tOFF (50% CTL to 10/90% rf) 0.7 - 3.7 GHz 0.7 - 3.7 GHz 560 600 ns ns 9 - 14 For price, delivery, and to place orders, please contact Hittite microwave Corporation: 12 Elizabeth Drive, Ch...
Description 1 dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, 0.7 - 3.7 GHz

File Size 184.64K  /  6 Page

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    INA-03170

http://
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. INA-03170
OCR Text ...e high gain and low noise IF or rf amplification with minimum power consumption. The INA series of MMICs is fabricated using HP's 10 GHz fT,...microwave Integrated Circuit (MMIC) Typical Biasing Configuration VCC > 7 V rfC (Optional) Rbias...
Description Low Noise/ Cascadable Silicon Bipolar MMIC Amplifier
Low Noise, Cascadable Silicon Bipolar MMIC Amplifier

File Size 43.14K  /  3 Page

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    MRF10005

MOTOROLA[Motorola, Inc]
Part No. Mrf10005
OCR Text rf Line SEMICONDUCTOR TECHNICAL DATA Order this document by Mrf10005/D microwave Power Transistor . . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequen...
Description microwave POWER TRANSISTOR

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    MRF1000MB

Tyco Electronics
Part No. Mrf1000MB
OCR Text rf Line microwave Pulse Power Transistors Designed for Class A and AB common emitter amplifier applications in the low-power stages of IFF, DME, TACAN, radar transmitters, and CW systems. * Guaranteed Performance @ 1090 MHz, 18 Vdc -- C...
Description microwave POWER TRANSISTORS NPN SILICON

File Size 101.76K  /  4 Page

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    MRF1001 MRF1001A MSC1311

MICROSEMI[Microsemi Corporation]
Part No. Mrf1001 Mrf1001A MSC1311
OCR Text rf & microwave DISCRETE LOW POWER TRANSISTORS Features * * * * Silicon NPN, To-39 packaged VHF/UHF Transistor Ftau = 3.0 Ghz (typ) @ 300MHz, 14v, 90mA, G U max 2 = 11.5 dB (typ) @ 300 MHz, 14v, 90mA 1. Emitter 2. Base 3. Collec...
Description From old datasheet system
rf & microwave DISCRETE LOW POWER TRANSISTORS

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    MRF1002 MRF1002MA MRF1002MB

MOTOROLA[Motorola, Inc]
Part No. Mrf1002 Mrf1002MA Mrf1002MB
OCR Text rf Line SEMICONDUCTOR TECHNICAL DATA Order this document by Mrf1002MA/D microwave Pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar trans...
Description microwave POWER TRANSISTORS

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    MRF10031

MOTOROLA[Motorola, Inc]
Part No. Mrf10031
OCR Text rf Line SEMICONDUCTOR TECHNICAL DATA Order this document by Mrf10031/D microwave Long Pulse Power Transistor Designed for 960 - 1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode-S transmitters....
Description microwave POWER TRANSISTOR

File Size 101.34K  /  4 Page

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    MRF1004 MRF1004MB

MACOM[Tyco Electronics]
Part No. Mrf1004 Mrf1004MB
OCR Text rf Line microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. * Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 4.0 Watt...
Description microwave POWER TRANSISTORS NPN SILICON

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