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For memories Found Datasheets File :: 9436    Search Time::1.875ms    
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    LPC54608J512ET180 LPC54605J256BD100 LPC54606J256BD100 LPC54606J512BD208 LPC54618J512ET180 LPC546XX LPC54605J256ET100 LPC

NXP Semiconductors
Part No. LPC54608J512ET180 LPC54605J256BD100 LPC54606J256BD100 LPC54606J512BD208 LPC54618J512ET180 LPC546XX LPC54605J256ET100 LPC54605J256ET180 LPC54605J512BD100 LPC54605J512ET100 LPC54605J512ET180 LPC54606J256ET100 LPC54606J256ET180 LPC54606J512BD100 LPC54607J256BD208 LPC54607J256ET180 LPC54607J512ET180 LPC54608J512BD208 LPC54616J256ET180 LPC54616J512BD100 LPC54616J512BD208 LPC54616J512ET100 LPC54618J512BD208 LPC54628J512ET180
OCR Text ...e triggers, able to access all memories and dma-capable peripherals. ? lcd controller supporting both super- twisted nematic (stn) and thin-film transistor (tft) displays. it has a dedi cated dma controller, selectable display resolutio...
Description 32-bit ARM Cortex-M4 microcontroller

File Size 3,084.57K  /  169 Page

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    MK22FN128VDC10

NXP Semiconductors
Part No. MK22FN128VDC10
OCR Text ...ing 1.25 dhrystone mips per mhz memories and memory interfaces ? 128 kb of embedded flash and 24 kb of ram ? serial programming interface(ezport) ? pre-programmed kinetis flashloader for one-time, in- system factory programming system perip...
Description Kinetis K22F 128KB Flash

File Size 1,004.69K  /  74 Page

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    Freescale Semiconductor...
Part No. IMX51A
OCR Text ... all popular types of external memories: mobile ddr, ddr2, psram , nor flash, nand flash (mlc and slc), and onenand (managed nand). the i.mx51a processor also includes a rich multimedia suite of interfaces: lcd controller for two display...
Description i.MX51A Automotive and Infotainment Applications Processors

File Size 2,097.14K  /  172 Page

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    24C02 ST25C02B1TR ST25C02B3TR ST25C02B5TR ST25C02B6TR ST25C02M1TR ST25C02M3TR ST25C02M5TR ST25C02M6TR ST24C02 ST24C02B1T

STMicroelectronics N.V.
意法半导
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
Part No. 24C02 ST25C02B1TR ST25C02B3TR ST25C02B5TR ST25C02B6TR ST25C02M1TR ST25C02M3TR ST25C02M5TR ST25C02M6TR ST24C02 ST24C02B1TR ST24C02B3TR ST24C02B5TR ST24C02B6TR ST24C02M1TR ST24C02M3TR ST24C02M5TR ST24C02M6TR ST24C02RB1TR ST24C02RB3TR ST24C02RB5TR ST24C02RB6TR ST24C02RM1TR ST24C02RM3TR ST24C02RM5TR ST24C02RM6TR ST24W02 ST24W02B1TR ST24W02B3TR ST24W02B5TR ST24W02B6TR ST24W02M1TR ST24W02M3TR ST24W02M5TR ST24W02M6TR ST25W02B1TR ST25W02B3TR ST25W02B5TR ST25W02B6TR ST25W02M1TR ST25W02M3TR ST25W02M5TR ST25W02M6TR ST24C02R ST24C02B1 ST24C02B3 ST24C02RB6 ST25W02 ST25C02
OCR Text ...ctrically erasable programmable memories (EEPROM), organized as 256 x 8 bits. They are manufactured in SGSTHOMSON's Hi-Endurance Advanced CMOS technology which guarantees an endurance of one million erase/write cycles with a data retention ...
Description IC MAX 7000 CPLD 32 44-PLCC I2C串行EEPROM
SERIAL 2K (256 x 8) EEPROM 串行2K56 × 8)的EEPROM
SERIAL 2K (256 x 8) EEPROM 串行2K256 × 8)的EEPROM
Programmable Logic IC; Logic Type:Programmable; No. of Macrocells:189; Package/Case:240-PQFP; Leaded Process Compatible:No; Number of Circuits:1728; Peak Reflow Compatible (260 C):No; Mounting Type:surface mount RoHS Compliant: No
IC MAX 7000 CPLD 32 44-TQFP
MOSFET, N, SO-8; Transistor type:MOSFET; Current, Id cont:4A; Resistance, Rds on:6.7R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak

File Size 143.96K  /  16 Page

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    24C04 ST25C04 ST25C04B1TR ST25C04B3TR ST25C04B5TR ST25C04B6TR ST25C04M1TR ST25C04M3TR ST25C04M5TR ST25C04M6TR ST24C04 ST

意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. 24C04 ST25C04 ST25C04B1TR ST25C04B3TR ST25C04B5TR ST25C04B6TR ST25C04M1TR ST25C04M3TR ST25C04M5TR ST25C04M6TR ST24C04 ST24C04B1TR ST24C04B3TR ST24C04B5TR ST24C04B6TR ST24C04M1TR ST24C04M3TR ST24C04M5TR ST24C04M6TR ST25W04 ST25W04B1TR ST25W04B3TR ST25W04B5TR ST25W04B6TR ST25W04M1TR ST25W04M3TR ST25W04M5TR ST25W04M6TR ST24W04 ST24W04B1TR ST24W04B3TR ST24W04B5TR ST24W04B6TR ST24W04M1TR ST24W04M3TR ST24W04M5TR ST24W04M6TR 2435 ST24W04B3 ST24W04M1 -24C04
OCR Text ...ctrically erasable programmable memories (EEPROM), organized as 2 blocks of 256 x8 bits. They are manufactured in STMicroelectronics's Hi-Endurance Advanced CMOS technology which guarantees an endurance of one million erase/write cycles wit...
Description KIT, NIOS FOR CYCLONE II; Kit contents:Nios II Development Board, Nios II IDE, Quartus II Web Edition design software, SOPC Builder system integration tool, Cables and accessories, Design examples and applications RoHS Compliant: Yes
IC MAX 7000 CPLD 256 208-PQFP
PowerPak; Charge, gate n-channel:27nC; Current, Idm pulse:40A; Depth, external:5.26mm; RoHS Compliant: Yes
MOSFET, N SO-8MOSFET, N SO-8; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:80V; Case style:PowerPak SO-8; Current, Id cont:7.6A
(ST2xxx) 4 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection
From old datasheet system
4 Kbit Serial I 2 C Bus EEPROM with User-Defined Block Write Protection
4KbitSerialI2CBusEEPROMwithUser-DefinedBlockWriteProtection

File Size 123.70K  /  16 Page

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    24C08 ST25C08 ST25C08B1TR ST25C08B3TR ST25C08B5TR ST25C08B6TR ST25C08M1TR ST25C08M3TR ST25C08M5TR ST25C08M6TR ST24W08B1T

意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. 24C08 ST25C08 ST25C08B1TR ST25C08B3TR ST25C08B5TR ST25C08B6TR ST25C08M1TR ST25C08M3TR ST25C08M5TR ST25C08M6TR ST24W08B1TR ST24W08B3TR ST24W08B5TR ST24W08B6TR ST25W08B1TR ST25W08B3TR ST25W08B5TR ST25W08B6TR ST24C08 ST24C08B1TR ST24C08B3TR ST24C08B5TR ST24C08B6TR ST24C08M1TR ST24C08M3TR ST24C08M5TR ST24C08M6TR ST24W08 ST25W08M1TR ST25W08M3TR ST25W08M5TR ST25W08M6TR ST24W08M1TR ST24W08M3TR ST24W08M5TR ST24W08M6TR ST25W08
OCR Text ...ctrically erasable programmable memories (EEPROM), organized as 4 blocks of 256 x8 bits. They are manufactured in STMicroelectronics's Hi-Endurance Advanced CMOS technology which guarantees an endurance of one million erase/write cycles wit...
Description IC ACEX 1K FPGA 100K 484-FBGA
Pulse Width Modulation (PWM) Controller IC; Topology:Flyback, Forward; Control Mode:Current; Number of PWM Outputs:1; Input Voltage Primary Min:15V; Input Voltage Primary Max:200V; Duty Cycle Max:50%
MOSFET, N POWERPAKMOSFET, N POWERPAK; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:150V; Case style:PowerPak SO-8; Current, Id
(ST2xxx) 8 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection
8 Kbit Serial I 2 C Bus EEPROM with User-Defined Block Write Protection
8KbitSerialI2CBusEEPROMwithUser-DefinedBlockWriteProtection

File Size 124.09K  /  16 Page

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    24C16 ST25C16 ST25C16B1TR ST25C16B3TR ST25C16B5TR ST25C16B6TR ST25C16M1TR ST25C16M3TR ST25C16M5TR ST25C16M6TR ST24C16 ST

STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. 24C16 ST25C16 ST25C16B1TR ST25C16B3TR ST25C16B5TR ST25C16B6TR ST25C16M1TR ST25C16M3TR ST25C16M5TR ST25C16M6TR ST24C16 ST24C16B1TR ST24C16B3TR ST24C16B5TR ST24C16B6TR ST24C16M1TR ST24C16M3TR ST24C16M5TR ST24C16M6TR ST24W16 ST24W16B1TR ST24W16B3TR ST24W16B5TR ST24W16B6TR ST24W16M1TR ST24W16M3TR ST24W16M5TR ST24W16M6TR ST25W16 ST25W16B1TR ST25W16B3TR ST25W16B5TR ST25W16B6TR ST25W16M1TR ST25W16M3TR ST25W16M5TR ST25W16M6TR
OCR Text ...ctrically erasable programmable memories (EEPROM), organized as 8 blocks of 256 x8 bits. These are manufactured in STMicroelectronics's Hi-Endurance Advanced CMOS technology which guarantees an endurTable 1. Signal Names PRE PB0, PB1 SDA S...
Description MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-6.4A; Package/Case:PowerPAK 1212-8 16千位串行I2C总线的EEPROM与用户定义的块写保护
16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16千位串行I2C总线的EEPROM与用户定义的块写保护
MOSFET, DUAL NN POWERPAKMOSFET, DUAL NN POWERPAK; Transistor type:MOSFET; Transistor polarity:Dual N; Voltage, Vds max:100V; Case style:PowerPak SO-8; Current, Id cont:1.8A; Current, Idm pulse:10A; Power, Pd:1.3W; Resistance, Rds
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.6A; On-Resistance, Rds(on):0.065ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:MICRO FOOT; Leaded Process Compatible:No
MOSFET, DUAL, PP, POWERPAK; Transistor type:MOSFET; Current, Id cont:7A; Resistance, Rds on:0.02R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak; Charge, gate p channel:49nC; Current, Idm pulse:30A; Depth, RoHS Compliant: Yes
(ST2xxx) 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection
16/8/4/2/1KbitSerialICBusEEPROM

File Size 125.39K  /  17 Page

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    KV31P100M120SF8 MKV31F256VLL12 MKV31F256VLH12P

NXP Semiconductors
Part No. KV31P100M120SF8 MKV31F256VLL12 MKV31F256VLH12P
OCR Text ...ing 1.25 dhrystone mips per mhz memories and memory interfaces ? 256 kb of embedded flash and 48 kb of ram ? preprogrammed kinetis flashloader for one-time, in- system factory programming system peripherals ? 16-channel dma controller ? ind...
Description Kinetis KV31F 256 KB Flash

File Size 918.77K  /  64 Page

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    KV31P100M120SF7

NXP Semiconductors
Part No. KV31P100M120SF7
OCR Text ...ing 1.25 dhrystone mips per mhz memories and memory interfaces ? 512 kb of embedded flash and 96 kb of ram ? flexbus external bus interface ? preprogrammed kinetis flashloader for one-time, in- system factory programming timers ? two 8-ch m...
Description Kinetis KV31F 512KB Flash

File Size 909.46K  /  66 Page

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