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RF Monolithics Inc
RFM[RF Monolithics, Inc]
RF Monolithics Inc
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| Part No. |
RX5500
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| OCR Text |
...ata is given with the ASH radio matched to a 50 ohm load. Matching component values are given on the next page. 4. See Table 1 on Page 8 for additional information on ASH radio event timing.
S M -2 0 L P a c k a g e D r a w in g
0 .3 8 ... |
| Description |
433.92 MHz Hybrid Receiver
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| File Size |
88.26K /
10 Page |
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RFM[RF Monolithics, Inc]
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| Part No. |
RX5501
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| OCR Text |
...ata is given with the ASH radio matched to a 50 ohm load. Matching component values are given on the next page. 4. See Table 1 on Page 8 for additional information on ASH radio event timing.
SM-20L Package Drawing
B C D
E
ASH Tran... |
| Description |
315.00 MHz Hybrid Receiver
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| File Size |
58.46K /
10 Page |
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it Online |
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RFM[RF Monolithics, Inc]
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| Part No. |
RX6501
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| OCR Text |
...ata is given with the ASH radio matched to a 50 ohm load. Matching component values are given on the next page. 4. See Table 1 on Page 8 for additional information on ASH radio event timing.
SM-20H Package Drawing
B C D
E
ASH Tran... |
| Description |
868.35 MHz Hybrid Receiver
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| File Size |
56.75K /
10 Page |
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it Online |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFC44V3436
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| OCR Text |
matched GaAs FET
DESCRIPTION
The MGFC44V3436 is an internally impedance matched GaAs power FET especially designed for use in 3.4~3.6 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
OUT... |
| Description |
3.4-3.6GHz BAND 25W INTERNALLY matched GaAs FET
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| File Size |
18.53K /
1 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFC42V7785A_04 MGFC42V7785A MGFC42V7785A04
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| OCR Text |
matched GaAs FET DESCRIPTION
The MGFC42V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ~ 8.5 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.
O U ... |
| Description |
7.7 ~ 8.5GHz BAND 16W INTERNALLY matched GaAs FET
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| File Size |
206.53K /
2 Page |
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http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFC42V6472A
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| OCR Text |
matched GaAs FET DESCRIPTION
The MGFC42V6472A is an internally impedance matched GaAs power FET especially designed for use in 6.4 - 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
O U... |
| Description |
6.4 - 7.2GHz BAND 16W INTERNALLY matched GaAs FET
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| File Size |
216.82K /
3 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFC42V5964A
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| OCR Text |
matched GaAs FET DESCRIPTION
The MGFC42V5964A is an internally impedance matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
unit ... |
| Description |
5.9 - 6.4GHz BAND 16W INTERNALLY matched GaAs FET
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| File Size |
191.71K /
3 Page |
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Advanced Semiconductor ...
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| Part No. |
ALN1800T2 ALN1800T2-17
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| OCR Text |
matched lna module the plerow tm aln - series is the compactly designed surface - mount module for the use of the lna with or w ithout the following gain blocks in the infrastructure equipment of the mobile wireless (cdma, gsm, ... |
| Description |
Internally matched LNA Module
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| File Size |
359.43K /
4 Page |
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it Online |
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Mitsubishi Electric Semicon...
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFC42V5258_04 MGFC42V5258 MGFC42V525804 MGFC42V525812
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| OCR Text |
matched GaAs FET DESCRIPTION
The MGFC42V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 - 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
OUTL... |
| Description |
5.2 - 5.8GHz BAND 16W INTERNALLY matched GaAs FET
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| File Size |
188.49K /
2 Page |
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it Online |
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