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  K4E170411D-F Datasheet PDF File

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    Bourns, Inc.
Samsung Semiconductor Co., Ltd.
Part No. K4E170411D K4E160411D
Description 4M x 4Bit CMOS Dynamic RAM with Extended Data Out 4米4位的CMOS动态随机存储器的扩展数据输
Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 220uF; Voltage: 35V; Case Size: 10x16 mm; Packaging: Bulk 4米4位的CMOS动态随机存储器的扩展数据输

File Size 259.16K  /  21 Page

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Texas Instruments

Part No. LM2917MX/NOPB
Description Frequency to Voltage Converter 14-SOIC -40 to 85
Tech specs    

Official Product Page

HUA FENG CIRCUIT





    K4E160411D K4E160412D K4E170411D K4E170412D K4E16704112D K4E160411D-B K4E160412D-B K4E160411D-F K4E160412D-F K4E170411D-

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4E160411D K4E160412D K4E170411D K4E170412D K4E16704112D K4E160411D-B K4E160412D-B K4E160411D-F K4E160412D-F K4E170411D-B K4E170411D-F K4E170412D-F K4E170412D-B
Description 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.

File Size 254.50K  /  21 Page

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Texas Instruments

Part No. LM2907MX/NOPB
Description Frequency to Voltage Converter 14-SOIC -40 to 85
Tech specs    

Official Product Page

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Part: K4E170412D-FC60
Maker: SAMSUNG(三星)
Pack: TSSOP
Stock: 196
Unit price for :
    50: $1.27
  100: $1.21
1000: $1.15

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