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  irf5210 Datasheet PDF File

For irf5210 Found Datasheets File :: 6    Search Time::0.891ms    
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    IRF5210

IRF[International Rectifier]
Part No. irf5210
OCR Text irf5210 HEXFET(R) Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS(on) = 0.06 G ...
Description -100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-100V Rds(on)=0.06ohm Id=-40A)
Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)
Power MOSFET(Vdss=-100V/ Rds(on)=0.06ohm/ Id=-40A)

File Size 121.40K  /  8 Page

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    IRF[International Rectifier]
Part No. IRFI5210
OCR Text ...cycle 2%. t=60s, =60Hz Uses irf5210 data and test conditions VDD = -25V, starting TJ = 25C, L = 3.1mH RG = 25, IAS = -21A. (See Figure 12) ISD -21A, di/dt -480A/s, VDD V(BR)DSS, TJ 175C IRFI5210 1000 VGS - 15V - 10V -...
Description HEXFET Power MOSFET

File Size 144.67K  /  8 Page

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    IRF5210STRL IRF5210STRR IRF5210L

International Rectifier
Part No. irf5210STRL irf5210STRR irf5210L
OCR Text ...300s; duty cycle 2%. ? uses irf5210 data and test conditions source-drain ratings and characteristics parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -100 CCC CCC v v gs = 0v, i d = -250a...
Description -100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
-100V Single P-Channel HEXFET Power MOSFET in a TO-262 package

File Size 194.50K  /  10 Page

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    IRF5210STRLHR IRF5210STRR

International Rectifier
Part No. irf5210STRLHR irf5210STRR
OCR Text ...300s; duty cycle 2%. ? uses irf5210 data and test conditions source-drain ratings and characteristics parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -100 CCC CCC v v gs = 0v, i d = -250a...
Description 40 A, 100 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET
Advanced Process Technology

File Size 192.10K  /  11 Page

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    IRF5210L IRF5210S

IRF[International Rectifier]
Part No. irf5210L irf5210S
OCR Text ...h 300s; duty cycle 2%. Uses irf5210 data and test conditions Starting TJ = 25C, L = 3.1mH RG = 25, I AS = -21A. (See Figure 12) TJ 175C ** When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and so...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.06ohm/ Id=-40A)
Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)

File Size 182.97K  /  10 Page

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