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ion-implanted Datasheet PDF File

For ion-implanted Found Datasheets File :: 960 Search Time::1.234ms
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				NEC
Part No.	UPC5201GA-XXX-2E5 UPC5201GA-XXX-9EU UPC5023GR-XXX UPC5023GR-XXX-GJG UPC5020GS-XXX-BAF UPC5023GS-XXX UPC5031GS-XXX UPC5032GS-XXX-BAF UPC5201GS-XXX UPC5023GR-XXX-8JG UPC5023GR-XXX-E2 UPC5021GS-XXX-GJG UPC5023GR-XXX-E1 UPC5020GS-XXX-GJG UPC5200GS-XXX UPC5022GT-XXX UPC5031GS-XXX-BAF UPC5200GS-XXX-GJG UPC5021GT-XXX UPC5023GS-XXX-GJG UPC5201GS-XXX-EX UPC5201GS-XXX-GJG UPC5020GT-XXX UPC5032GS-XXX-GJG UPC5201GS-XXX-TX UPC5032GT-XXX UPC5034GT-XXX UPC5201GS-XXX-GJG-TX UPC5201GT-XXX UPC5022GH-XXX-2A5 UPC5021GA-XXX-2E5 UPC5021GA-XXX-9EU UPC5022GA-XXX-2E5 UPC5022GA-XXX-9EU UPC5031GA-XXX-2E5 UPC5032GA-XXX-2E5 UPC5032GA-XXX-9EU UPC5034GA-XXX-9EU UPC5022GB-XXX-2A5 UPC5032GB-XXX-1A7 UPC5034GB-XXX-1A7 UPC5202GB-XXX-2A5 UPC5204GB-XXX-1A7 UPC5024GF-XXX-3B9 UPC5024GF-XXX-3BE UPC5203GF-XXX-3BE UPC5020GR-8JG UPC5021CT-XXX UPC5022CT-XXX UPC5032CT-XXX UPC5034CT-XXX UPC5202CT-XXX UPC5203CT-XXX UPC5023CS-XXX UPC5031CS-XXX UPC5201CS-XXX UPC5024CU-XXX UPC5203CU-XXX UPC5204CU-XXX UPC5022CU-XXX UPC5201CU-XXX UPC5202CU-XXX UPC5024GC-XXX-3B9 UPC5024GFA-XXX-3BE UPC5034GC-XXX-3B9 UPC5204GC-XXX-3B9 UPC5024GH-XXX-2A5 UPC5024GH-XXX-2AK UPC5200GH-XXX-2A5 UPC5020GSA2-XXX-GJG UPC5203GH-XXX-2A5 UPC5032GSA2-XXX-GJG UPC5204C
OCR Text	... 1.00 Absolute accuracy : 15 % (ion-implanted) : 20 % (Polysilicon) Resistor Resistance accuracy Relative accuracy (between adjacent resistors) : 2 % (ion-implanted) : 3 % (Polysilicon) Capacitor Capacitance accuracy Absolute accuracy : 15 ...
Description	Analog signal processing circuit dedicated semi-custom LSI Semi-custom IC for analog signal processing Dedicated analog signal processing circuit semi-custom LSI Analog signal processing semi-custom LSI
File Size	626.26K / 28 Page	View it Online	Download Datasheet

				DIODES INC
Part No.	C826
OCR Text	ion-implanted hyperabrupt tuner diodes issue 2 ? march 94 absolute maximum ratings. parameter symbol max unit reverse voltage v r 25 v forward current i f 200 ma power dissipation at t amb =25c p tot 300 mw junction temperature t j 125 c s...
Description	100 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
File Size	54.11K / 2 Page	View it Online	Download Datasheet

				Bourns Electronic Solutions
Part No.	TISP3380F3 TISP3290F3 TISP3260F3 TISP3240F3-08
OCR Text	...ction devices are fabricated in ion implanted planar structures to ensure precise and matched breakover c ontrol and are virtually transparent to the system in normal operation. how to order ion-implanted breakdown region precise and stable...
Description	HIGH-VOLTAGE DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
File Size	606.17K / 12 Page	View it Online	Download Datasheet

				Bourns Electronic Solutions Bourns Electronic Solut...
Part No.	TISP3180F3 TISP3150F3
OCR Text	...oltage protectors device symbol ion-implanted breakdown region precise and stable voltage low voltage overshoot under surge planar passivated junctions low off-state current <10 a rated for international surge wave shapes these medium...
Description	MEDIUM-VOLTAGE DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
File Size	693.46K / 12 Page	View it Online	Download Datasheet

				BOURNS INC
Part No.	TISP7350H3SLL
OCR Text	...0 a 10/1000 gr-1089-core rating ion-implanted breakdown region - precise and stable voltage low voltage overshoot under surge device name v drm v v (bo) v tisp7350h3sll 275 350 rated for international surge wave shapes - single and simultan...
Description	350 V, 60 A, SILICON SURGE PROTECTOR
File Size	158.66K / 4 Page	View it Online	Download Datasheet

				BOURNS INC
Part No.	TISP3290H3SLL TISP3070H3SLL-S
OCR Text	...ompatible with to-220ab pin-out ion-implanted breakdown region - precise and stable voltage low voltage overshoot under surge rated for international surge wave shapes - single and simultaneous impulses device name v drm v v (bo) v tisp3070...
Description	290 V, 60 A, SILICON SURGE PROTECTOR PROTECTOR - DUAL BIDIRECTIONAL
File Size	157.18K / 5 Page	View it Online	Download Datasheet

				POWER INNOVATIONS LTD
Part No.	TISP7080H3SL
OCR Text	...protector s a bourns compan y l ion-implanted breakdown region - precise dc and dynamic voltage s l rated for international surge wave shapes - single and simultaneous impulse s devic e v dr m v v (bo ) v ?707 0 5 8 7 0 ?708 0 6 5 8 0 ?709 ...
Description	SILICON SURGE PROTECTOR
File Size	303.85K / 15 Page	View it Online	Download Datasheet

				Motorola
Part No.	MC-1504
OCR Text	.... advances in lase~trimming and ion- implanted devices, as well as monolithic fabrication techniques, make these devices stable and accurate to 12 bits over both military and commercial temperature ranges. in addition to excellent tem- pera...
Description	(MC1504 / MC1404) Voltage Reference Family
File Size	3,066.16K / 12 Page	View it Online	Download Datasheet

				Power Innovations Limited
Part No.	TISP4082LP
OCR Text	... system secondary protectio n l ion-implanted breakdown region precise and stable voltage low voltage overshoot under surg e l planar passivated junctions low off-state current<1 0 a l rated for international surge wave shape s l package o...
Description	SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS
File Size	133.16K / 7 Page	View it Online	Download Datasheet

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