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NTE[NTE Electronics]
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| Part No. |
NTE2386
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| OCR Text |
enhancemen Mode, High Speed Switch
Description: The NTE2386 Power MOSFET features advantages such as voltage control, very fast switching, ease of paralleling and temperature stability, and is suited for applications such as switching powe... |
| Description |
MOSFET N-Channel enhancemen Mode, High Speed Switch
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| File Size |
27.08K /
3 Page |
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Advanced Power Electronics
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| Part No. |
4500GM
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| OCR Text |
enhancemen t electronics corp. mode power mosfet simple drive requirement n-ch bv dss 20v low on-resistance r ds(on) 3 0 m fast switching i d 6a p-ch bv dss -20v r ds(on) 5 0 m description i... |
| Description |
Search --To AP4500GM
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| File Size |
123.30K /
7 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
BUK724R5-30C
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| OCR Text |
...dard level gate drive n-channel enhancemen t mode field-effect transistor (fet) in a plastic package using advanced trenchmos te chnology. this product has been designed and qualified to the appropriate aec standard for use in high perfor... |
| Description |
N-channel TrenchMOS standard level FET
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| File Size |
203.17K /
14 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
BUK754R0-40C
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| OCR Text |
enhancemen t mode field-effect transistor (fet) in a plastic package using advanced trenchmos te chnology. this product has been designed and qualified to the appropriate aec standard for use in high performance automotive applications. ... |
| Description |
N-channel TrenchMOS standard level FET
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| File Size |
190.29K /
14 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
BUK7E2R3-40C
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| OCR Text |
...dard level gate drive n-channel enhancemen t mode field-effect transistor (fet) in a plastic package using advanced trenchmos te chnology. this product has been designed and qualified to the appropriate aec standard for use in high perfor... |
| Description |
N-channel TrenchMOS standard level FET N沟道TrenchMOS标准电平场效应管
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| File Size |
213.67K /
14 Page |
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it Online |
Download Datasheet |
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