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Part No. |
KM616FR4010ZI-8
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OCR Text |
...t word read active l x 1) l l h din high-z lower byte write active l x 1) l h l high-z din upper byte write active l x 1) l l l din din word...8 km616fr4010zi-10 48-csp with 48 ball, 85ns, 1.8/2.0v 48-csp with 48 ball, 100ns, 1.8/2.0v
re... |
Description |
256K X 16 STANDARD SRAM, 85 ns, PBGA48
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File Size |
180.13K /
9 Page |
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Alliance Semiconductor ... ALSC[Alliance Semiconductor Corporation] Alliance Semiconductor, Corp.
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Part No. |
AS7C3256A-8 AS7C3256A-8TCN AS7C3256A-8JC AS7C3256A-8JCN AS7C3256A-8TC
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OCR Text |
...L OE X H L X High Z High Z DOUT DIN Data Mode Standby (ISB, ISB1) Output disable (ICC) Read (ICC) Write (ICC)
Key: X = Don't care, L = Lo...8
(R)
Recommended operating conditions
Parameter Supply voltage Input voltage Ambient operating... |
Description |
SRAM - 3.3V Fast Asynchronous 3.3V 32K X 8 CMOS SRAM (Common I/O) 32K X 8 STANDARD SRAM, 8 ns, PDSO28 Dual 4-Input Positive-AND Gate 14-SSOP -40 to 85 32K X 8 STANDARD SRAM, 8 ns, PDSO28
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File Size |
285.49K /
9 Page |
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AMICC[AMIC Technology] AMIC Technology Corporation
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Part No. |
LP61L1008AS-8 LP61L1008A LP61L1008AS-10 LP61L1008AS-12
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OCR Text |
.../O Operation High Z High Z DOUT DIN Supply Current ISB, ISB1 ICC1 ICC1 ICC1
Capacitance (TA = 25C, f = 1.0MHz)
Symbol CIN* CI/O* Parameter Input Capacitance Input/Output Capacitance Min. Max. 6 8 Unit pF pF Conditions VIN = 0V VI/O = 0V... |
Description |
128K X 8 BIT 3.3V HIGH SPEED CENTER POWER CMOS SRAM
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File Size |
116.81K /
11 Page |
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it Online |
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TE Connectivity Ltd
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Part No. |
8-1241434-1
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OCR Text |
...8 zu verwenden l?tbarkeit nach din iec 68, teil 2-20 passende anschlussgeh?use siehe tabelle 2, blatt 2 bezugspunkt fr stitchtiefe zentr...8 x 0.8: mating-side 0.8-3m pre-tinplated solder points, 4-8m post-tinplated pins o0.6... |
Description |
THIS DRAWING IS A CONTROLLED DOCUMENT.
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File Size |
795.05K /
2 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
MH8S72DBFD-8 MH8S72DBFD-7 B99054
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OCR Text |
...Vss
Input
Input/Output
Din Mask/Output Disable:When DQMB is high in burst write.Din for the current cycle is masked.When DQMB is hi...8
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
BASIC FUNCTIONS
The MH8S... |
Description |
From old datasheet system 603 /979 /776-BIT ( 8 /388 /608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM 603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
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File Size |
940.59K /
56 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
MH8S72DALD-8 MH8S72DALD-6 MH8S72DALD-7 B99053
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OCR Text |
... to the rising edge of CK Input Din Mask/Output Disable:When DQMB is high in burst write.Din for the current cycle is masked.When DQMB is hi...8
603979776 -BIT (8388608 - WORD BY 72-BIT)Synchronous DRAM
BASIC FUNCTIONS
The MH8S72DALD prov... |
Description |
From old datasheet system 603979776-BIT (8388608 - WORD BY 72-BIT)Synchronous DRAM
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File Size |
697.82K /
55 Page |
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it Online |
Download Datasheet |
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