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International Rectifier, Corp.
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Part No. |
L3235N
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OCR Text |
...c za zb zs=4100 w 43 11 10 9 rx cac il cac 100 m f 6 18 28 32 gdk 31 oh 25 rng 27 sby 3 bgnd 13 v cc cvss cvb cvcc v ss agnd v bat v ss v cc v bat 17239 29 cs vreg base ring 38 30 w tip 40 30 w v bat tip r p1 r p1 ring r p2 20 w r p2 20 w... |
Description |
HIGHLY INTEGRATED SLIC KIT TARGETED TO PABX AND KEY SYSTEM APPLICATIONS 高度集成的用户接口盒针对交换机与关键系统应用
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File Size |
3,167.29K /
25 Page |
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OKI SEMICONDUCTOR CO., LTD.
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Part No. |
MSM518128-45JS
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OCR Text |
... 60 ns 26 ns t aa 30 ns 14 ns t cac 15 ns 14 ns t oea 15 ns msm518128/l-45 45 ns 90 ns 682.5 mw 24 ns 13 ns 13 ns operating (max.) 1.05 mw (l-version) e2g0012-17-41 this version: jan. 1998 previous version: may 1997
2/15 ? semiconducto... |
Description |
131,072-Word X 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE 131,072字8位动态随机存储器:快速页面模式型
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File Size |
216.59K /
15 Page |
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Alliance Semiconductor, Corp. HIROSE ELECTRIC Co., Ltd. ITT, Corp.
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Part No. |
IC41LV44002AS-50T IC41C44002ASL-60J IC41C44002AS-60J
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OCR Text |
...rac )5060ns cas access time (t cac )1315ns column address access time (t aa )2530ns edo page mode cycle time (t pc )2025ns read/write cycle time (t rc ) 84 104 ns icsi reserves the right to make changes to its products at any time without ... |
Description |
4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 4米46兆)动态与江户页面模式内存
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File Size |
250.72K /
20 Page |
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OKI SEMICONDUCTOR CO., LTD.
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Part No. |
MSM51X17400F-10TS-K
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OCR Text |
...ipation family t rac t aa t cac t oea cycle time (min.) operating (max.) standby (max.) msm51x17400f-10 100ns 50ns 20ns 20ns 200ns 200mw 1.1mw
fedd51x17400f-03 1 semiconductor msm51x17400f 2/13 pin configura... |
Description |
4,194,304-Word 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE 4194304词位动态随机存储器:快速页面模式型
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File Size |
144.74K /
13 Page |
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Air Cost Control
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Part No. |
IC41SV44054-100T
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OCR Text |
...) 70 100 ns cas access time (t cac )2025ns column address access time (t aa )3550ns fast page mode cycle time (t pc )4560ns read/write cycle time (t rc ) 130 180 ns icsi reserves the right to make changes to its products at any time withou... |
Description |
4Mx4 bit Dynamic RAM with Fast Page Mode 4Mx4位动态RAM的快速页面模
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File Size |
239.62K /
17 Page |
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it Online |
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ST Microelectronics
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Part No. |
STLC3055N
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OCR Text |
... det rttx cac iltf rd iref rlim rth csvr cvcc vpos bgnd tip ring vbat agnd tx rx zac1 zac rs zb cttx1 cttx2 fttx ckttx supervision ttx proc ac proc reference stage line driver crev input logic and decod... |
Description |
WLL & ISDN-TA SUBSCRIBER LINE INTERFACE CIRCUIT
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File Size |
318.10K /
25 Page |
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it Online |
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Samsung Semiconductor Co., Ltd.
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Part No. |
KMM372V400CK
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OCR Text |
... ns 3,4 access time from cas t cac 18 20 ns 3,4,5,11 access time from column address t aa 30 35 ns 3,10,11 cas to output in low-z t clz 5 5 ns 3,11 output buffer turn-off delay t off 5 18 5 20 ns 6,11 transition time(rise and fall) t t 2 ... |
Description |
4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V 4米72的DRAM内存ECC的使Mx4KK刷新.3
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File Size |
412.16K /
19 Page |
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Integrated Silicon Solution, Inc.
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Part No. |
IS41LV16257B-35K IS41LV16257B-35T
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OCR Text |
...560ns max. cas access time (t cac )1115ns max. column address access time (t aa )1830ns min. fast page mode cycle time (t pc )1425ns min. read/write cycle time (t rc ) 60 110 ns 256k x 16 (4-mbit) dynamic ram with fast page mode
is41lv1... |
Description |
256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 256K X 16 FAST PAGE DRAM, 35 ns, PDSO40
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File Size |
193.07K /
20 Page |
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Samsung Semiconductor Co., Ltd.
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Part No. |
KMM5364005BSW
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OCR Text |
...performance range speed t rac t cac t rc t hpc -5 50ns 13ns 84ns 20ns -6 60ns 15ns 104ns 25ns pin names pin name function a0 - a11 address inputs dq0 - 35 data in/out w read/write enable ras0 , ras2 row address strobe cas0 - cas3 column ... |
Description |
4M x 36 DRAM SIMM(4M x 36 动RAM模块) 4米36的DRAM上海药物研究所米36动态内存模块)
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File Size |
375.73K /
19 Page |
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it Online |
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Samsung semiconductor
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Part No. |
KMM372C804BS
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OCR Text |
... ns 3,4 access time from cas t cac 18 20 ns 3,4,5,11 access time from column address t aa 30 35 ns 3,10,11 cas to output in low-z t clz 5 5 ns 3,11 output buffer turn-off delay t off 5 18 5 20 ns 6,11 transition time(rise and fall) t t 1 ... |
Description |
8M x 72 DRAM DIMM with ECC using 4M16, 4K Refresh, 5V
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File Size |
447.14K /
19 Page |
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it Online |
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Price and Availability
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