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1N4006 PF10K 15KPA45A 1344184 74HC674 ML9XX15 MSC3005 SP9715C
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    SSF1009

Silikron Semiconductor Co.,LTD.
Part No. SSF1009
OCR Text ...? f ast switching and reverse body recovery ? 17 5 operating temperature it utilizes the latest trench processing techniques to ach ieve the high cell density and reduces the on - resistance wit...
Description Advanced MOSFET process technology

File Size 633.47K  /  8 Page

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    FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Part No. FDG329N FDG329NNL
OCR Text ...Gate Voltage Drain Current Gate-body Leakage, Forward Gate-body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = 250 A Min 20 Typ Max Units V Off Characteristics ID = 250 A,Referenced to 25C VDS = 16 V, VGS = 12...
Description 20V N-Channel PowerTrench MOSFET
CAP CER 220PF 1KVDC U2J 1206

File Size 74.31K  /  5 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDG327N FDG327NNL
OCR Text ...Gate Voltage Drain Current Gate-body Leakage, Forward Gate-body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = 250 A Min 20 Typ Max Units V Off Characteristics ID = 250 A,Referenced to 25C VDS = 16 V, VGS = 8 ...
Description 20V N-Channel PowerTrench MOSFET
20V N-Channel PowerTrench MOSFET

File Size 74.29K  /  5 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDG327NZ
OCR Text ...Gate Voltage Drain Current Gate-body Leakage (Note 2) Test Conditions VGS = 0 V, ID = 250 A Min Typ 20 11 Max Units V mV/C Off Characteristics ID = 250 A, Referenced to 25C VDS = 16 V, VGS = 8 V, VGS = 0 V VDS = 0 V ...
Description 20V N-Channel PowerTrench MOSFET

File Size 231.34K  /  5 Page

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    IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR
OCR Text ...eter Continuous Source Current (body Diode) Pulsed Source Current (body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol --- --- 82 showing...
Description HEXFET Power MOSFET HEXFET功率MOSFET
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package

File Size 122.50K  /  10 Page

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    IRF2807

International Rectifier
Part No. IRF2807
OCR Text ...eter Continuous Source Current (body Diode) Pulsed Source Current (body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol --- --- 82 showing...
Description Power MOSFET(Vdss=75V, Id=82A?)
Power MOSFET(Vdss=75V, Id=82A)

File Size 149.88K  /  8 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDFS6N303_03 FDFS6N303 FDFS6N30303 FDFS6N303NL
OCR Text ...e 2) V A A nA nA V Gate - body Leakage, Forward Gate - body Leakage, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance On-State Drain Current Input Capacitance Output Capacitance Reverse Transfe...
Description 30V N-Channel MOSFET with Schottky Diode

File Size 64.82K  /  5 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDFC3N108_07 FDFC3N108
OCR Text ...Gate Voltage Drain Current Gate-body Leakage (Note 2) TA = 25C unless otherwise noted Test Conditions VGS = 0 V, ID = 250 A Min Typ 20 12 Max Units V mV/C Off Characteristics BVDSS BVDSS TJ IDSS IGSS ID = 250 A, Refer...
Description N-Channel 1.8V Specified PowerTrench MOSFET with Schottky Diode

File Size 152.15K  /  6 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDFC3N108_05 FDFC3N108 FDFC3N10805
OCR Text ...Gate Voltage Drain Current Gate-body Leakage (Note 2) TA = 25C unless otherwise noted Test Conditions VGS = 0 V, ID = 250 A Min Typ 20 12 Max Units V mV/C Off Characteristics BVDSS BVDSS TJ IDSS IGSS ID = 250 A, Refer...
Description N-Channel 1.8V Specified PowerTrench MOSFET with Schottky Diode

File Size 94.27K  /  6 Page

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    IRF3205L IRF3205S IRF3205

IRF[International Rectifier]
Part No. IRF3205L IRF3205S IRF3205
OCR Text ...eter Continuous Source Current (body Diode) Pulsed Source Current (body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol --- --- 110 showin...
Description Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?)
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A)

File Size 144.83K  /  10 Page

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