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    EMX1DXV6T5G EMX1DXV6T1G EMX1DXV6T1

ON Semiconductor
Part No. EMX1DXV6T5G EMX1DXV6T1G EMX1DXV6T1
OCR Text ...rface mount applications, where board space is at a premium. features ? reduces board space ? high h fe , 210?460 (typical) ? low v ce(sat) , < 0.5 v ? these are pb?free devices maximum ratings (t a = 25 c) rating symbol value unit colle...
Description Dual NPN General Purpose Amplier Transistor
Dual NPN General Purpose Amplifier Transistor

File Size 48.16K  /  4 Page

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    AON6884

Alpha & Omega Semiconductors
Part No. AON6884
OCR Text ...e device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 15 0c. the value in any given application ...
Description 40V Dual N-Channel MOSFET

File Size 245.18K  /  6 Page

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    AON6816

Alpha & Omega Semiconductors
Part No. AON6816
OCR Text ...he device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 150 c. the value in any given application...
Description 30V Dual N-Channel AlphaMOS

File Size 279.15K  /  6 Page

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    LG
Part No. 47LM620S 47LM625S
OCR Text ...stalling any component, circuit board mod - ule or any other receiver assembly. b. disconnecting or reconnecting any receiver electrical plug or other electrical connection. c. connecting a test substitute in parallel with an electroly...
Description LED LCD TV Manual

File Size 9,038.09K  /  119 Page

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    TPC8082

Toshiba Semiconductor
Part No. TPC8082
OCR Text ...device mounted on a glass-epoxy board (a), figure 5.1 note 3: device mounted on a glass-epoxy board (b), figure 5.2 note 4: v dd = 24 v, t ch = 25 (initial), l = 1.0 mh, r g = 1 ? , i ar = 18 a fig. fig. fig. fig. 5.1 5.1 5.1 5.1...
Description MOSFETs

File Size 225.25K  /  9 Page

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    PMXB56EN

NXP Semiconductors
Part No. PMXB56EN
OCR Text ...unted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated, mounting pad for drain 6 cm 2 . nxp semiconductors pmxb56en 30 v, n-channel trench mosfet pmxb56en all information provided in this document is subject to legal...
Description 30 V, N-channel Trench MOSFET

File Size 269.10K  /  15 Page

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    MMZ25332BT1

Freescale Semiconductor, Inc
Part No. MMZ25332BT1
OCR Text ...c10, c11 and c15 are labeled on board but not placed. 4 rf device data freescale semiconductor, inc. mmz25332bt1 50 ohm application circuit: 2110?2170 mhz, 5 volt operation figure 4. mmz 25332bt1 test circuit component layout (1) v bias [...
Description Heterojunction Bipolar Transistor Technology (InGaP HBT)

File Size 568.40K  /  19 Page

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    DMP2066UFDE DMP2039UFDE4-7

Diodes Incorporated
Part No. DMP2066UFDE DMP2039UFDE4-7
OCR Text ...ce mounted on fr-4 substrate pc board, 2oz copper, with 1inch square copper pad layout. 6. device mounted on fr-4 pc board, with minimum recommended pad layout, single sided. 7. short duration pulse test used to minimize self-heating ef...
Description 25V P-CHANNEL ENHANCEMENT MODE MOSFET
   25V P-CHANNEL ENHANCEMENT MODE MOSFET

File Size 172.27K  /  6 Page

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    TOSHIBA
Part No. TPH6R003NL
OCR Text ...device mounted on a glass-epoxy board (a), figure 5.1 note 4: device mounted on a glass-epoxy board (b), figure 5.2 note 5: v dd = 24 v, t ch = 25 (initial), l = 16 h, i ar = 38 a fig. fig. fig. fig. 5.1 5.1 5.1 5.1 device mount...
Description Power MOSFET (N-ch single VDSS≤30V)

File Size 233.58K  /  9 Page

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    TOSHIBA
Part No. TPCC8138
OCR Text ...device mounted on a glass-epoxy board (a), figure 5.1 note 3: device mounted on a glass-epoxy board (b), figure 5.2 note 4: v dd = -16 v, t ch = 25 (initial), l = 0.5 mh, r g = 25 ? , i ar = -18 a fig. fig. fig. fig. 5.1 5.1 5.1 ...
Description Power MOSFET (P-ch single)

File Size 233.20K  /  9 Page

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