Part Number Hot Search : 
HCTS21D 708V6Q 4AHCT1 HD74HC04 TPD4104 F2004 PS104RS N27C25
Product Description
Full Text Search
  base-pulsed Datasheet PDF File

For base-pulsed Found Datasheets File :: 11843    Search Time::1.547ms    
Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    Rohm CO.,LTD.
ROHM[Rohm]
Part No. 2SB1695K
OCR Text ...9 2.9 (2) (1) Emitter (2) Base (3) Collector !Absolute maximum ratings (Ta=25C) Symbol VCBO VCEO Collector-emitter voltage VEBO Em...Pulsed Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. -30 -30 -6 - - - 270 - - ...
Description MS (MIL-C-5015) SERIES 97 3106B SPLIT SHELL STRAIGHT PLUGS, STRAIGHT BODY STYLE, SOLDER TERMINATION, 20 SHELL SIZE, 20-11 INSERT ARRANGEMENT, PLUG GENDER, 13 CONTACTS
Low frequency amplifier

File Size 72.31K  /  3 Page

View it Online

Download Datasheet





    2N5015 2N5013 2N5011S

Microsemi Corporation
Part No. 2N5015 2N5013 2N5011S
OCR Text ...15 v cer 1000 vdc collector-base voltage 2n5010 500 vdc 2n5011 600 vdc 2n5012 700 vdc 2n5013 800 vdc 2n5014 900 vdc 2n5015 ...pulsed 2n5010 2n5011 2n5012 2n5013 2n5014 2n5015 v (br)cer 500 600 700 800 900 1000 ...
Description NPN SILICON TRANSISTOR

File Size 42.33K  /  3 Page

View it Online

Download Datasheet

    PSMN009-100P

NXP Semiconductors N.V.
Part No. PSMN009-100P
OCR Text ...tion gate drain source mounting base; connected to drain mb D Simplified outline Graphic symbol G mbb076 S 123 SOT78 (T...pulsed; tp 50 s; Tj 150 C; = 25 % tp 10 s; pulsed; Tmb = 25 C; see Figure 3 Tmb = 25 C; see Figu...
Description N-channel TrenchMOS SiliconMAX standard level FET

File Size 176.38K  /  13 Page

View it Online

Download Datasheet

    PSMN009-100B

NXP Semiconductors N.V.
Part No. PSMN009-100B
OCR Text ...tion gate drain source mounting base; connected to drain 2 1 3 Simplified outline [1] mb Graphic symbol D G mbb076 S SOT4...pulsed; tp 50 s; Tj 150 C; = 25 % VGS = 10 V; Tmb = 100 C; see Figure 1 VGS = 10 V; Tmb = 25 C; s...
Description N-channel TrenchMOS SiliconMAX standard level FET

File Size 174.62K  /  13 Page

View it Online

Download Datasheet

    BUK7107-55ATE

NXP Semiconductors N.V.
Part No. BUK7107-55ATE
OCR Text ...e drain cathode source mounting base; connected to drain 12 3 45 S K mbl317 Simplified outline mb Graphic symbol D A G SOT4...pulsed Tmb = 25 C; see Figure 1 continuous pulsed; tp = 5 ms; = 0.01 [1] [1] [1] Conditions Tj 25 ...
Description N-channel TrenchPLUS standard level FET

File Size 216.25K  /  15 Page

View it Online

Download Datasheet

    NXP Semiconductors N.V.
Philips
Part No. BUK9107-55ATE
OCR Text ...de (k) 5 source (s) mb mounting base; connected to drain (d) front view mbk127 12 4 35 mb 15 mb mbl263 mbl317 d s g a k philips semiconduc...pulsed; t p 10 m s; figure 3 - 560 a p tot total power dissipation t mb =25 c; figure 1 - 272 w i ...
Description TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 75A I(D) | SOT-426 晶体| MOSFET | N-CHANNEL | 55V V(BR)DSS | 75A I(D) | SOT-426封装
TrenchPLUS logic level FET

File Size 155.88K  /  17 Page

View it Online

Download Datasheet

    2SB17301

Rohm
Part No. 2SB17301
OCR Text ... Abbreviated symbol : FV (1) Base (2) Emitter (3) Collector Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collec...Pulsed Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. -15 -12 -6 - - - 270 - - Typ. - -...
Description General purpose amplification(−12V, −2A)

File Size 64.81K  /  3 Page

View it Online

Download Datasheet

    Philips
Part No. PHD24N03LT PHD24N03LT-02
OCR Text ... drain (d) source (s) mounting base, connected to drain (d) [1] g 2 1 Top view 3 MBK091 s 03ab30 SOT428 (D-PAK) [1] 1. It...pulsed; duty cycle = 25% Tmb = 25 C; VGS = 10 V; Figure 2 and 3 Tmb = 100 C; VGS = 10 V; Figure 2 ID...
Description N-channel enhancement mode field-effect transistor
From old datasheet system

File Size 182.55K  /  13 Page

View it Online

Download Datasheet

    2SB17091

Rohm
Part No. 2SB17091
OCR Text ... 0.95 0.95 1.9 0.16 (1) Base (2) Emitter (3) Collector Each lead has same dimensions Absolute maximum ratings (Ta=25C) Symbol VC...Pulsed Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. -15 -12 -6 - - - 270 - - ...
Description Genera purpose amplification(−12V, −1.5A)

File Size 94.38K  /  3 Page

View it Online

Download Datasheet

    BUK9Y43-60E

NXP Semiconductors
Part No. BUK9Y43-60E
OCR Text ...s source 4 g gate mb d mounting base; connected to drain m b 1 2 3 4 lfpak; power- so8 (sot669) s d g m b b 0 7 6 6. ordering information ta...pulsed [1] [2] -15 15 v t mb = 25 c; v gs = 5 v; fig. 1 - 22 a i d drain current t mb = 100 c; v...
Description N-channel 60 V, 43 mΩ logic level MOSFET in LFPAK56

File Size 343.29K  /  13 Page

View it Online

Download Datasheet

For base-pulsed Found Datasheets File :: 11843    Search Time::1.547ms    
Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

▲Up To Search▲

 




Price and Availability




 
Price & Availability of base-pulsed

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.45265197753906